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参数资料
| 型号： | SST26VF016-80-5I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 11/39页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 80MHZ SQI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Instructions
Instructions are used to read, write (erase and program), and configure the SST26VF016/032. The
instruction bus cycles are two nibbles each for commands (Op Code), data, and addresses. Prior to
executing any write instructions, the Write-Enable (WREN) instruction must be executed. The com-
plete list of the instructions is provided in Table 3.
All instructions are synchronized off a high to low transition of CE#. Inputs are accepted on the rising
edge of SCK starting with the most significant nibble. CE# must be driven low before an instruction is
entered and must be driven high after the last nibble of the instruction has been input (except for read
instructions). Any low-to-high transition on CE# before receiving the last nibble of an instruction bus
cycle, will terminate the instruction being entered and return the device to the standby mode.
Table 3: Device Operation Instructions for SST26VF016/032 (1 of 2)
Instruction
NOP
RSTEN
RST 3
EQIO
RSTQIO 4
Read 5
High-Speed
Description
No Operation
Reset Enable
Reset Memory
Enable Quad I/O
Reset Quad I/O
Read Memory
Read Memory at Higher Speed
Command
Cycle 1
00H
66H
99H
38H
FFH
03H
0BH
Address
Cycle(s) 2
0
0
0
0
0
3
3
Dummy
Cycle(s)
0
0
0
0
0
0
1
Data
Cycle(s)
0
0
0
0
0
1 to ?
1 to ?
Maximum
Frequency
80 MHz
33 MHz
Read 5
Set Burst 6
Read Burst
Read PI 7
Set Burst Length
nB Burst with Wrap
Jump to address within 256
C0H
0CH
08H
0
3
1
0
1
1
1
n to ?
1 to ?
Byte page indexed by n
Read I
Jump to address within block
09H
2
2
1 to ?
indexed by n
Read BI
JEDEC-ID 5,8
Quad J-ID 8
Jump to block Indexed by n
JEDEC-ID Read
Quad I/O J-ID Read
10H
9FH
AFH
1
0
0
2
0
0
1 to ?
3 to ?
3 to ?
Sector
Erase 9
Erase 4 KBytes of Memory Array
20H
3
0
0
Block Erase 10
Erase 64, 32 or 8 KBytes of
D8H
3
0
0
80 MHz
Memory Array
Chip Erase
Page Program
Write Suspend
Write Resume
Read SID
Program SID 11
Lockout SID 11
RDSR 12
WREN
WRDI
Erase Full Array
Program 1 to 256 Data Bytes
Suspends Program/Erase
Resumes Program/Erase
Read Security ID
Program User Security ID area
Lockout Security ID Programming
Read Status Register
Write Enable
Write Disable
C7H
02H
B0H
30H
88H
A5H
85H
05H
06H
04H
0
3
0
0
1
1
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1 to 256
0
0
1 to 32
1 to 24
0
1 to ?
0
0
?2011 Silicon Storage Technology, Inc.
11
DS-25017A
04/11
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相关代理商/技术参数 |
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|---|---|
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2AE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2E | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
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