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参数资料
| 型号： | SST26VF016-80-5I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 15/39页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 80MHZ SQI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Reset Quad I/O (RSTQIO)
The Reset Quad I/O instruction, FFH, resets the device to 1-bit SPI protocol operation. To execute a
Reset Quad I/O operation, the host drives CE# low, sends the Reset Quad I/O command cycle (FFH)
then, drives CE# high. The device accepts either SPI (8 clocks) or SQI (2 clocks) command cycles. For
SPI, SIO[3:1] are don’t care for this command, but should be driven to V IH or V IL .
High-Speed Read (80 MHz)
The High-Speed Read instruction, 0BH, is supported in both SPI bus protocol and SQI protocol. On
power-up, the device is set to use SPI.
Initiate High-Speed Read by executing an 8-bit command, 0BH, followed by address bits [A23-A0] and
a dummy byte. CE# must remain active low for the duration of the High-Speed Read cycle. SIO2 and
SIO3 must be driven V IH for the duration of the Read cycle. See Figure 10 for the High-Speed Read
sequence for SPI bus protocol.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
71 72
80
SCK MODE 0
SI/SIO0
0B
ADD.
ADD.
ADD.
X
SO/SIO1
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1359 F31.0
Note: SIO2 and SIO3 must be driven V IH
Figure 10: High-Speed Read Sequence (SPI)
In SQI protocol, the host drives CE# low then send the Read command cycle command, 0BH, followed by
three address cycles and one dummy cycle. Each cycle is two nibbles (clocks) long, most significant nibble first.
After the dummy cycle, the Serial Quad I/O (SQI) Flash Memory outputs data on the falling edge of
the SCK signal starting from the specified address location. The device continually streams data out-
put through all addresses until terminated by a low-to-high transition on CE#. The internal address
pointer automatically increments until the highest memory address is reached, at which point the
address pointer returns to address location 000000H.
During this operation, blocks that are Read-locked will output data 00H.
CE#
MODE 3
0
1
2
9
16
MODE 3
CLK
MODE 0
MODE 0
SIO(3:0)
C1 C0
A5
A4
A3
A2
A1
A0
X
X
H0
L0
H1
L1
H2
L2
H3
L3
MSB
Data In
Note: C[1:0] = 0BH
Figure 11: High-Speed Read Sequence (SQI)
?2011 Silicon Storage Technology, Inc.
15
Data Out
DS-25017A
1359 F06.2
04/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2AE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2E | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
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