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| 型号： | SST26VF016-80-5I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 25/39页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 80MHZ SQI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Read Block-Protection Register (RBPR)
The Read Block-Protection Register instruction outputs the Block-Protection Register data which
determines the protection status. To execute a Read Block-Protection Register operation, the host
drives CE# low, and then sends the Read Block-Protection Register command cycle (72H). Each cycle
is two nibbles long, most significant nibble first.
After the command cycle, the device outputs data on the falling edge of the SCK signal starting with
the most significant nibble, see Tables 8 - 9 for definitions of each bit in the Block-Protection Register.
The RBPR command does not wrap around. After all data has been output, the device will output 0H
until terminated by a low-to-high transition on CE#. See Figure 22.
CE#
MODE 3
0
2
4
6
8
10
12
N
SCK
SIO(3:0)
C1 C0 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5
MSN LSN
HN L
BPR [m:m-7]
BPR [7:0]
1359 F34.2
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
Block Protection Register (BPR) m = 47/79 for SST26VF016/SST26VF032 respectively
C[1:0]=72H
Figure 22: Read Block Protection Register Sequence
Write Block-Protection Register (WBPR)
To execute a Write Block-Protection Register operation the host drives CE# low; sends the Write
Block-Protection Register command cycle (42H); then sends six cycles of data for SST25VF016, or 10
cycles of data for SST25VF032, and finally drives CE# high. Each cycle is two nibbles long, most sig-
nificant nibble first. See Tables 8 - 9 for definitions of each bit in the Block-Protection Register.
CE#
MODE 3
0
2
4
6
8
10
12
N
SCK
MODE 0
SIO(3:0)
C1 C0 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5
MSN LSN
BPR [m:m-7]
HN LN
BPR [7:0]
1359 F35.1
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
Block Protection Register (BPR) m = 48/80 for SST26VF016/SST26VF032 respectively
C[1:0]=42H
Figure 23: Write Block Protection Register Sequence
?2011 Silicon Storage Technology, Inc.
25
DS-25017A
04/11
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相关代理商/技术参数 |
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|---|---|
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2AE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2E | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
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