- 您现在的位置：买卖IC网 > PDF目录4236 > SST26VF016-80-5I-QAE (Microchip Technology)IC FLASH SER 16M 80MHZ SQI 8WSON PDF资料下载
参数资料
| 型号： | SST26VF016-80-5I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 21/39页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 80MHZ SQI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页当前第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页
Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Page-Program
The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the
selected page address must be in the erased state (FFH) before initiating the Page-Program operation.
A Page-Program applied to a protected memory area will be ignored. Prior to the program operation,
execute the WREN instruction.
To execute a Page-Program operation, the host drives CE# low then sends the Page Program com-
mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high.
The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd
number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most
significant bit first. Poll the BUSY bit in the Status register or wait T PP for the completion of the internal,
self-timed, Page-Program operat i on. See Figure 18 for the Page-Program sequence.
When executing Page-Program, the memory range for the SST26VF016/032 is divided into 256 Byte
page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last
256 Bytes of data as the correct data to be programmed. If the target address for the Page-Program
instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data
input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap
around and will be programmed at the start of that target page.
CE#
MODE 3
0
2
4
6
8
10
12
542
SCK
MODE 0
SIO(3:0)
C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2
MSN LSN
Data Byte 0 Data Byte 1 Data Byte 2
HN LN
Data Byte 255
1359 F10.0
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
C[1:0] = 02H
Figure 18: Page-Program Sequence
Write-Suspend and Write-Resume
Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in
order to erase, program, or read data in another portion of memory. The original operation can be con-
tinued with the Write-Resume command.
Only one write operation can be suspended at a time; if an operation is already suspended, the device
will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is
not a valid command while a write is suspended.
?2011 Silicon Storage Technology, Inc.
21
DS-25017A
04/11
相关PDF资料 |
PDF描述 |
|---|---|
| SST39LF200A-55-4C-B3KE-T | IC FLASH MPF 2MBIT 55NS 48TFBGA |
| XC6SLX150T-3FG676I | IC FPGA SPARTAN 6 676FGGBGA |
| XCV200E-7FG256I | IC FPGA 1.8V I-TEMP 256-FBGA |
| SST39SF020A-45-4C-WHE | IC FLASH MPF 2MBIT 45NS 32TSOP |
| SST39SF020A-70-4I-WHE | IC FLASH MPF 2MBIT 70NS 32TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2AE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2E | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
发布紧急采购，3分钟左右您将得到回复。