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参数资料
| 型号： | SST26VF016-80-5I-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 23/39页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 16M 80MHZ SQI 8WSON |
| 标准包装： | 98 |
| 系列： | SST26 SQI® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 80MHz |
| 接口： | Serial Quad I/O™（SQI™） |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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Serial Quad I/O (SQI) Flash Memory
A Microchip Technology Company
SST26VF016 / SST26VF032
Data Sheet
Program Security ID
The Program Security ID instruction programs one to 24 Bytes of data in the user-programmable,
Security ID space. The device ignores a Program Security ID instruction pointing to an invalid or pro-
tected address, see Table 7. Prior to the program operation, execute WREN.
To execute a Program SID operation, the host drives CE# low, sends the Program Security ID com-
mand cycle (A5H), one address cycle, the data to be programmed, then drives CE# high. The pro-
grammed data must be between 1 to 24 Bytes and in whole Byte increments; sending an odd number
of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles long, most significant nib-
ble first. To determine the completion of the internal, self-timed Program SID operation, poll the BUSY
bit in the software status register, or wait T PSID for the completion of the internal self-timed Program
Security ID operation.
Table 7: Program Security ID
Program Security ID
Pre-Programmed at factory
User Programmable
Address Range
00H – 07H
08H – 1FH
T7.0
25017
Lockout Security ID
The Lockout Security ID instruction prevents any future changes to the Security ID. To execute a Lock-
out SID, the host drives CE# low, sends the Lockout Security ID command cycle (85H), then drives
CE# high. A cycle is two nibbles long, most significant nibble first. The user map polls the BUSY bit in
the software status register or waits T PSID for the completion of he Lockout Security ID operation.
Read-Status Register (RDSR)
The Read-Status register (RDSR) command outputs the contents of the Status register. The Status register
may be read at any time even during a Write operation. When a Write is in progress, check the BUSY bit
before sending any new commands to assure that the new commands are properly received by the device.
To execute a Read-Status-Register operation the host drives CE# low, then sends the Read-Status-
Register command cycle (05H). Each cycle is two nibbles long, most significant nibble first. Immedi-
ately after the command cycle, the device outputs data on the falling edge of the SCK signal. The data
output stream continues until terminated by a low-to-high transition on CE#. See Figure 19 for the
RDSR instruction sequence.
CE#
MODE 3
0
2
4
6
8
N
SCK MODE 0
SIO(3:0)
C1 C0 H0 L0 H0 L0 H0 L0
MSN LSN
Status Byte Status Byte Status Byte
H1 L1
Status Byte
1359 F11.0
Note: MSN = Most Significant Nibble; LSN = Least Significant Nibble
C[1:0] = 05H
Figure 19: Read-Status-Register (RDSR) Sequence
?2011 Silicon Storage Technology, Inc.
23
DS-25017A
04/11
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相关代理商/技术参数 |
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|---|---|
| SST26VF016-80-5I-QAE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-QE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
| SST26VF016-80-5I-S2AE | 功能描述:闪存 16M 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2AE-T | 功能描述:闪存 2.7 to 3.6V 16Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26VF016-80-5I-S2E | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:Serial Quad I/O (SQI) Flash Memory |
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