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参数资料
| 型号： | SST26WF032-80-4I-QAE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 6 X 5 MM, ROHS COMPLIANT, WSON-8 |
| 文件页数： | 17/36页 |
| 文件大小： | 1339K |
| 代理商： | SST26WF032-80-4I-QAE |
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2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
24
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Read Block-Protection Register (RBPR)
The Read Block-Protection Register instruction outputs the Block-Protection Register data which
determines the protection status. To execute a Read Block-Protection Register operation, the host
drives CE# low, and then sends the Read Block-Protection Register command cycle (72H). Each cycle
is two nibbles long, most significant nibble first.
After the command cycle, the device outputs data on the falling edge of the SCK signal starting with
the most significant nibble, see Table 8 for definitions of each bit in the Block-Protection Register. The
RBPR command does not wrap around. After all data has been output, the device will output 0H until
terminated by a low-to-high transition on CE#. See Figure 23.
Figure 23:Read Block Protection Register Sequence
Write Block-Protection Register (WBPR)
To execute a Write Block-Protection Register operation the host drives CE# low, sends the Write
Block-Protection Register command cycle (42H), sends 10 cycles of data, and finally drives CE# high.
Each cycle is two nibbles long, most significant nibble first. See Table 8 for definitions of each bit in the
Block-Protection Register.
Figure 24:Write Block Protection Register Sequence
1409 F34.0
MODE 3
0
SCK
SIO(3:0)
CE#
C1 C0
2
H0 L0
MSN LSN
4
H1 L1
6
H2 L2
8
H3 L3
10
H4 L4
12
H5 L5
N
HN L
BPR [m:m-7]
BPR [7:0]
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
Block Protection Register (BPR) m = 79 for SST26WF032
C[1:0]=72H
1409 F35.0
MODE 3
0
SCK
SIO(3:0)
CE#
C1 C0
MODE 0
2
H0 L0
MSN LSN
4
H1 L1
6
H2 L2
8
H3 L3
10
H4 L4
12
H5 L5
N
HN LN
BPR [m:m-7]
BPR [7:0]
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
Block Protection Register (BPR) m = 79 for SST26WF032
C[1:0]=42H
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26WF032-80-4I-QAE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST26WF032-80-4I-S2AE | 功能描述:闪存 1.65 to 1.95V 32Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26WF032-80-4I-S2AE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST270 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| SST270-E3 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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