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参数资料
| 型号： | SST26WF032-80-4I-QAE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 6 X 5 MM, ROHS COMPLIANT, WSON-8 |
| 文件页数： | 4/36页 |
| 文件大小： | 1339K |
| 代理商： | SST26WF032-80-4I-QAE |
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2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
12
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
No Operation (NOP)
The No Operation command only cancels a Reset Enable command. NOP has no impact on any other
command.
WRDI
Write Disable
04H
0
80 MHz
RBPR12
Read Block Protec-
tion Register
72H
0
1 to m/4
WBPR10,12
Write Block Protec-
tion Register
42H
0
1 to m/4
Lock Down Block
Protection Register
8DH
0
T3.0
1409
1. One BUS cycle is two clock periods (command, access, or data).
2. Address bits above the most significant bit of each density can be VIL or VIH.
3. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset.
4. Device accepts eight-clock command in SPI mode, or two-clock command in SQI mode.
5. After a power cycle, Read, High-Speed Read, and JEDEC-ID Read instructions input and output cycles are SPI bus
protocol.
6. Burst length– n = 8 Bytes: Data(00H); n = 16 Bytes: Data(01H); n = 32 Bytes: Data(02H); n = 64 Bytes: Data(03H).
7. The Quad J-ID read wraps the three Quad J-ID Bytes of data until terminated by a low-to-high transition on CE#
8. Sector Addresses: Use AMS - A12, remaining address are don’t care, but must be set to VIL or VIH.
9. Blocks are 64 KByte, 32 KByte, or 8KByte, depending on location. Block Erase Address: AMS - A16 for 64 KByte; AMS -
A15 for 32 KByte; AMS - A13 for 8 KByte. Remaining addresses are don’t care, but must be set to VIL or VIH.
10. Requires a prior WREN command.
11. The Read-Status register is continuous with ongoing clock cycles until terminated by a low-to-high transition on CE#.
12. Data is written/read from MSB to LSB. MSB = 79 for SST26WF032.
Table 3: Device Operation Instructions for SST26WF032
Instruction
Description
Command
Cycle1
Address
Cycle(s)2
Dummy
Cycle(s)
Data
Cycle(s)
Maximum
Frequency
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26WF032-80-4I-QAE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST26WF032-80-4I-S2AE | 功能描述:闪存 1.65 to 1.95V 32Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26WF032-80-4I-S2AE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST270 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| SST270-E3 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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