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参数资料
| 型号： | SST26WF032-80-4I-QAE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 6 X 5 MM, ROHS COMPLIANT, WSON-8 |
| 文件页数： | 3/36页 |
| 文件大小： | 1339K |
| 代理商： | SST26WF032-80-4I-QAE |
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2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
11
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Instructions
Instructions are used to read, write (erase and program), and configure the SST26WF032. The
instruction bus cycles are two nibbles each for commands (Op Code), data, and addresses. Prior to
executing any write instructions, the Write-Enable (WREN) instruction must be executed. The com-
plete list of the instructions is provided in Table 3.
All instructions are synchronized off a high to low transition of CE#. Inputs are accepted on the rising
edge of SCK starting with the most significant nibble. CE# must be driven low before an instruction is
entered and must be driven high after the last nibble of the instruction has been input (except for read
instructions). Any low-to-high transition on CE# before receiving the last nibble of an instruction bus
cycle, will terminate the instruction being entered and return the device to the standby mode.
Table 3: Device Operation Instructions for SST26WF032
Instruction
Description
Command
Cycle1
Address
Cycle(s)2
Dummy
Cycle(s)
Data
Cycle(s)
Maximum
Frequency
NOP
No Operation
00H
0
80 MHz
RSTEN
Reset Enable
66H
0
RST3
Reset Memory
99H
0
EQIO
Enable Quad I/O
38H
0
RSTQIO4
Reset Quad I/O
FFH
0
Read5
Read Memory
03H
3
0
1 to
∞
25 MHz
High-Speed Read5 Read Memory at
Higher Speed
0BH
3
2
1 to
∞
80 MHz
Set Burst6
Set Burst Length
C0H
0
1
Read Burst
nB Burst with Wrap
0CH
3
2
n to
∞
JEDEC-ID 5,7
JEDEC-ID Read
9FH
0
3 to
∞
Quad J-ID7
Quad I/O J-ID Read
AFH
0
3 to
∞
Sector Erase8
Erase 4 KBytes of
Memory Array
20H
3
0
Block Erase9
Erase 64, 32 or 8
KBytes of Memory
Array
D8H
3
0
Chip Erase
Erase Full Array
C7H
0
Page Program
Program 1 to 256
Data Bytes
02H
3
0
1 to 256
Write Suspend
Suspends Program/
Erase
B0H
0
Write Resume
Resumes Program/
Erase
30H
0
Read SID
Read Security ID
88H
1
2
1 to 32
Program SID10
Program User Secu-
rity ID area
A5H
1
0
1 to 24
Lockout SID10
Lockout Security ID
Programming
85H
0
RDSR11
Read Status Regis-
ter
05H
0
1 to
∞
WREN
Write Enable
06H
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST26WF032-80-4I-QAE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST26WF032-80-4I-S2AE | 功能描述:闪存 1.65 to 1.95V 32Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST26WF032-80-4I-S2AE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST270 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
| SST270-E3 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
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