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参数资料
型号： ST10F269Z2Q3
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP144
封装： 28 X 28 MM, PLASTIC, QFP-144
文件页数： 83/160页
文件大小： 1541K
代理商： ST10F269Z2Q3
ST10F269
29/160
Example 3 Performing the Block Erase command
We assume that in the initialization phase the lowest 32K Bytes of Flash memory (sector 0) have been
mapped to segment 1.The registers R11/R12 contain an address related to the block to be erased
(segment number in R11, segment offset in R12, for example R11 = 01h, R12= 4000h will erase the block
1 - first 8K byte block).
MOV
R5, #01554h
;load auxilary register R5 with command address
;(used in command cycle 1)
MOV
R6, #02AA8h
;load auxilary register R6 with command address
;(used in command cycle 2)
SXCT
DPPO, #08h
;push data page pointer 0 and load it to point ;to
;segment 2
MOV
R7, #0A8h
;load register R7 with 1st CI enable command
MOV
[R5], R7
;command cycle 1
MOV
R7, #054h
;load register R7 with 2cd CI enable command
MOV
[R6], R7
;command cycle 2
MOV
R7, #080h
;load register R7 with Block Erase command
MOV
[R5], R7
;command cycle 3
MOV
R7, #0A8h
;load register R7 with 1st CI enable command
MOV
[R5], R7
;command cycle 4
MOV
R7, #054h
;load register R7 with 2cd CI enable command
MOV
[R6], R7
;command cycle 5
POP
DPP0
;restore DPP0: following addressing to the Flash
;will use EXTended instructions
;R11 contains the segment of the block to be erased
;R12 contains the segment offset address of the
;block to be erased
MOV
R7, #030h
;load register R7 with erase confirm code
EXTS
R11, #1
;use EXTended addressing for next MOV instruction
MOV
[R12], R7
;command cycle 6: the EPC starts execution of
;Erasing Command
Erase_Polling:
EXTS
R11, #1
;use EXTended addressing for next MOV instruction
MOV
R7, [R12]
;read Flash Status register (FSB) in R7
;Check if FSB.7 = ‘1’ (i.e. R7.7 = ‘1’)
JB
R7.7, Erase_OK
;Check if FSB.5 = 1 (Erasing Error)
JNB
R7.5, Erase_Polling
;Programming failed: Flash remains in Write
;Operation.
;To go back to normal Read operations, a Read/Reset
;command
;must be performed
Erase_Error:
MOV
R7, #0F0h
;load register R7 with Read/Reset command
EXTS
R11, #1
;use EXTended addressing for next MOV instruction
MOV
[R12], R7
;address is don’t care for Read/Reset command
...
;here place specific Error handling code
...
;When erasing operation finished succesfully,
;Flash is set back automatically to normal Read Mode
Erase_OK:
....
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相关代理商/技术参数
参数描述
ST10F269Z2Q6 功能描述:16位微控制器 - MCU 256K Flash 12K RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269Z2Q6/TR 功能描述:16位微控制器 - MCU 16B MCU 256K Byte and 12K Byte RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269Z2QX 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16-BIT MCU WITH MAC UNIT, 256K BYTE FLASH MEMORY AND 12K BYTE RAM
ST10F269Z2T3 功能描述:16位微控制器 - MCU ST10F272 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
ST10F269Z2T6 功能描述:16位微控制器 - MCU ST10F272 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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