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参数资料
| 型号： | ST10F269Z2Q6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP144 |
| 封装： | 28 X 28 MM, PLASTIC, QFP-144 |
| 文件页数： | 90/184页 |
| 文件大小： | 3276K |
| 代理商： | ST10F269Z2Q6 |
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5 - INTERNAL FLASH MEMORY
ST10F269
Instructions and Commands
All operations besides normal read operations are
initiated and controlled by command sequences
written to the Flash Command Interface (CI). The
Command Interface (CI) interprets words written
to the Flash memory and enables one of the
following operations:
– Read memory array
– Program Word
– Block Erase
– Chip Erase
– Erase Suspend
– Erase Resume
– Block Protection
– Block Temporary Unprotection
– Code Protection
Commands are composed of several write cycles
at specific addresses of the Flash memory. The
different
write
cycles
of
such
command
sequences offer a fail-safe feature to protect
against an inadvertent write.
A command only starts when the Command
Interface has decoded the last write cycle of an
operation. Until that last write is performed, Flash
memory remains in Read Mode
Notes: 1. As it is not possible to perform write
operations in the Flash while fetching code
from Flash, the Flash commands must be
written
by
instructions
executed
from
internal RAM or external memory.
2. Command write cycles do not need to
be consecutively received, pauses are
allowed, save for Block Erase command.
During this operation all Erase Confirm
commands must be sent to complete any
block erase operation before time-out
period expires (typically 96
s). Command
sequencing must be followed exactly. Any
invalid combination of commands will reset
the Command Interface to Read Mode.
Status Register
This register is used to flag the status of the
memory and the result of an operation. This
register can be accessed by read cycles during
the Erase-Program Controller (EPC) operation.
Erase Operation
This Flash memory features a block erase
architecture with a chip erase capability too. Erase
is accomplished by executing the six cycle erase
command sequence. Additional command write
cycles can then be performed to erase more than
one block in parallel. When a time-out period
elapses
(96
s) after the last cycle, the
Erase-Program Controller (EPC) automatically
starts and times the erase pulse and executes the
erase operation. There is no need to program the
block to be erased with ‘0000h’ before an erase
operation. Termination of operation is indicated in
the Flash status register. After erase operation,
the Flash memory locations are read as 'FFFFh’
value.
Erase Suspend
A block erase operation is typically executed
within 1.5 second for a 64K Byte block. Erasure of
a memory block may be suspended, in order to
read data from another block or to program data in
another block, and then resumed.
In-System Programming
In-system programming is fully supported. No
special programming voltage is required. Because
of
the
automatic
execution
of
erase
and
programming algorithms, write operations are
reduced to transferring commands and data to the
Flash and reading the status. Any code that
programs or erases Flash memory locations (that
writes data to the Flash) must be executed from
memory outside the on-chip Flash memory itself
(on-chip RAM or external memory).
A
boot
mechanism
is
provided
to
support
in-system programming. It works using serial link
via USART interface and a PC compatible or other
programming host.
Read/Write Protection
The Flash module supports read and write
protection in a very comfortable and advanced
protection functionality. If Read Protection is
installed, the whole Flash memory is protected
against
any
"external"
read
access;
read
accesses are only possible with instructions
fetched directly from program Flash memory. For
update of the Flash memory a temporary disable
of Flash Read Protection is supported.
The device also features a block write protection.
Software locking of selectable memory blocks is
provided to protect code and data. This feature
will disable both program and erase operations in
the selected block(s) of the memory. Block
Protection is accomplished by block specific
lock-bit which are programmed by executing a four
cycle command sequence. The locked state of
blocks is indicated by specific flags in the
according block status registers. A block may only
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST10F269Z2Q6/TR | 功能描述:16位微控制器 - MCU 16B MCU 256K Byte and 12K Byte RAM RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F269Z2QX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16-BIT MCU WITH MAC UNIT, 256K BYTE FLASH MEMORY AND 12K BYTE RAM |
| ST10F269Z2T3 | 功能描述:16位微控制器 - MCU ST10F272 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F269Z2T6 | 功能描述:16位微控制器 - MCU ST10F272 16B MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT |
| ST10F269ZX | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16-BIT MCU WITH MAC UNIT, 128K to 256K BYTE FLASH MEMORY AND 12K BYTE RAM |
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