参数资料
型号: ST7PL35F2MCXXXRE
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO20
封装: 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOP-20
文件页数: 45/168页
文件大小: 2955K
代理商: ST7PL35F2MCXXXRE
Obsolete
Product(s)
- Obsolete
Product(s)
ST7L34, ST7L35, ST7L38, ST7L39
139/168
ELECTRICAL CHARACTERISTICS (cont’d)
13.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
13.7.1
Functional
EMS
(Electro
Magnetic
Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs). See
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to VDD and VSS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed. The test results are given in the table be-
low based on the EMS levels and classes defined
in application note AN1709.
13.7.1.1 Designing hardened software
to avoid noise problems
EMC characterization and optimization are per-
formed at component level with a typical applica-
tion environment and simplified MCU software. It
should be noted that good EMC performance is
highly dependent on the user application and the
software in particular.
Therefore it is recommended that the user applies
EMC software optimization and prequalification
tests in relation with the EMC level requested for
his application.
Software recommendations:
The software flowchart must include the manage-
ment of runaway conditions such as:
– Corrupted program counter
– Unexpected reset
– Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset
and program counter corruption) are reproduced
by manually forcing a low state on the RESET pin
or the Oscillator pins for 1 second.
To complete these trials, ESD stress is applied di-
rectly on the device, over the range of specification
values. When unexpected behavior is detected,
the software is hardened to prevent unrecoverable
errors occurring (see application note AN1015).
13.7.2 Electro Magnetic Interference (EMI)
Based on a simple application running on the
product (toggling two LEDs through the I/O ports),
the product is monitored in terms of emission. This
emission test is in line with the norm SAE J 1752/
3 which specifies the board and the loading of
each pin. See Table 26.
Table 25. EMS Characteristics
Table 26. EMI Characteristics
Note:
1. Data based on characterization results, not tested in production.
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to induce a functional
disturbance
VDD = 5V, TA = 25°C, fOSC = 8 MHz
conforms to IEC 1000-4-2
3B
VFFTB
Fast transient voltage burst limits to be applied through 100pF
on VDD and VDD pins to induce a functional disturbance
VDD = 5V, TA = 25°C, fOSC = 8 MHz
conforms to IEC 1000-4-4
Symbol
Parameter
Conditions
Monitored
Frequency Band
Max vs. [fOSC/fCPU]
Unit
8/4 MHz
16/8 MHz
SEMI
Peak level1)
VDD = 5V, TA = 25°C, SO20 package,
conforming to SAE J 1752/3
0.1 MHz to 30 MHz
15
dBV
30 MHz to 130 MHz
13
19
130 MHz to 1 GHz
913
SAE EMI Level
2.5
3
-
相关PDF资料
PDF描述
ST7PL35F2UA/XXXE 8-BIT, MROM, 8 MHz, MICROCONTROLLER, QCC20
ST7L35F2UA/XXXRE 8-BIT, MROM, 8 MHz, MICROCONTROLLER, QCC20
ST7L35F2UC/XXXRE 8-BIT, MROM, 8 MHz, MICROCONTROLLER, QCC20
ST7L39F2MC/XXXE 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PDSO20
ST7L39F2UC/XXXRE 8-BIT, MROM, 8 MHz, MICROCONTROLLER, QCC20
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