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参数资料
| 型号： | STP13N95K3 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 950 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 10/15页 |
| 文件大小： | 650K |
| 代理商： | STP13N95K3 |
Electrical characteristics
STF13N95K3, STP13N95K3, STW13N95K3
4/15
Doc ID 15685 Rev 2
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
950
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,Tc=125 °C
1
50
A
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±10
A
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 A
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID= 5 A
0.68
0.85
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS =100 V, f=1 MHz, VGS=0
-
1620
-
pF
Coss
Output capacitance
117
pF
Crss
Reverse transfer
capacitance
1.2
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent capacitance time
related
VGS = 0, VDS = 0 to 760 V
-
115
-
pF
Co(er)
(2)
2.
energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent capacitance
energy related
-
131
-
pF
RG
Intrinsic gate resistance
f = 1MHz open drain
-
2.3
-
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 760 V, ID = 10 A
VGS =10 V
(see Figure 20)
-
51
10
30
-
nC
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