参数资料
型号: STP13N95K3
厂商: STMICROELECTRONICS
元件分类: JFETs
英文描述: 10 A, 950 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 9/15页
文件大小: 650K
代理商: STP13N95K3
STF13N95K3, STP13N95K3, STW13N95K3
Electrical ratings
Doc ID 15685 Rev 2
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,
TO-247
TO-220FP
VDS
Drain source voltage
950
V
VGS
Gate- source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
10
10 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
6
6 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
40
40 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
IAR
Max current during repetitive or single
pulse avalanche (pulse width limited by
Tjmax )
13
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
400
mJ
dv/dt (3)
3.
ISD ≤ 10 A, di/dt ≤ 400 A/s, VPeak ≤ V(BR)DSS
Peak diode recovery voltage slope
9
V/ns
Tj
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-247
TO-220FP
Rthj-case
Thermal resistance junction-case max
0.66
3.13
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
50
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
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