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参数资料
| 型号： | STP13N95K3 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 950 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 11/15页 |
| 文件大小： | 650K |
| 代理商： | STP13N95K3 |
STF13N95K3, STP13N95K3, STW13N95K3
Electrical characteristics
Doc ID 15685 Rev 2
5/15
The built-in-back Zener diodes have specifically been designed to enhance not only the
device’s ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 475 V, ID = 5 A,
RG=4.7 , VGS=10 V
(see Figure 22)
-
18
16
50
21
-
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
-
10
40
mA
A
VSD
(1)
1.
Pulsed: pulse duration = 300s, duty cycle 1.5%
Forward on voltage
ISD= 10 A, VGS=0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A, VDD= 60 V
di/dt = 100 A/s,
(see Figure 21)
-
500
9
36
ns
C
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 10 A,VDD= 60 V
di/dt=100 A/s,
Tj=150 °C
(see
-
624
11
37
ns
C
A
Table 8.
Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ. Max.
Unit
BVGSO
Gate-source breakdown voltage Igs ± 1mA, (open drain)
30
-
V
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