参数资料
型号: SUD50N04-09H-E3
厂商: Vishay Siliconix
文件页数: 5/6页
文件大小: 0K
描述: MOSFET N-CH D-S 40V TO252
标准包装: 2,000
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 5V @ 250µA
闸电荷(Qg) @ Vgs: 85nC @ 10V
输入电容 (Ciss) @ Vds: 3700pF @ 25V
功率 - 最大: 83.3W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 带卷 (TR)
SUD50N04-09H
Vishay Siliconix
THERMAL RATINGS
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72669.
Document Number: 72669
S-71661-Rev. E, 06-Aug-07
www.vishay.com
5
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SUD50N04-16P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S), 175 °C MOSFET
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SUD50N04-25P 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 175°C MOSFET
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