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参数资料
| 型号： | SUM110N10-09-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 110A D2PAK |
| 产品目录绘图： | SUB, SUM Series |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 160nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6700pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUM110N10-09-E3DKR |
SUM110N10-09
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V DS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
100
2
4
± 100
V
nA
V DS = 100 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 100 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 100 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V GS = 10 V, I D = 30 A
120
0.0078
0.0095
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V, I D = 30 A, T J = 125 °C
0.017
Ω
V GS = 10 V, I D = 30 A, T J = 175 °C
0.025
Forward Transconductance a
g fs
V DS = 15 V, I D = 30 A
25
S
Dynamic b
Input Capacitance
C iss
6700
Gate-Source Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
Gate-Drain Charge c
C oss
C rss
Q g
Q gs
Q gd
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 50 V, V GS = 10 V, I D = 85 A
750
280
110
24
24
160
pF
nC
Gate Resistance
R g
1.0
6.2
Ω
Turn-On Delay Time
c
t d(on)
20
30
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 50 V, R L = 0.6 Ω
I D ? 85 A, V GEN = 10 V, R g = 2.5 Ω
125
55
130
200
85
195
ns
Source-Drain Diode Ratin g s and Characteristics T C = 25
°C b
Continuous Current
Pulsed Current
I S
I SM
110
240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 85 A, V GS = 0 V
I F = 50 A, dI/dt = 100 A/μs
1.0
70
5.5
0.19
1.5
140
10
0.35
V
ns
A
μC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70677
S10-0644-Rev. G, 22-Mar-10
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相关代理商/技术参数 |
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| SUM110P04-04L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 40-V (D-S) 175-LC MOSFET |
| SUM110P04-04L-E3 | 功能描述:MOSFET 40V 110A 375W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| SUM110P04-05-E3 | 功能描述:MOSFET 40V 110A 375W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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