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参数资料
| 型号： | SUP18N15-95-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 18A TO220-3 |
| 标准包装： | 500 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 18A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 25V |
| 功率 - 最大： | 88W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 带卷 (TR) |
SUP18N15-95
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
150
2
± 100
V
nA
V DS = 120 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 120 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 120 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 15 A
25
0.077
0.095
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 15 A, T J = 125 °C
V GS = 10 V, I D = 15 A, T J = 175 °C
V GS = 6 V, I D = 10 A
0.081
0.190
0.250
0.100
Ω
Forward
Transconductance b
g fs
V DS = 15 V, I D = 15 A
25
S
Dynamic a
Input Capacitance
C iss
900
Gate-Drain Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
Gate-Source Charge c
c
Turn-On Delay Time c
C oss
C rss
Q g
Q gs
Q gd
t d(on)
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 75 V, V GS = 10 V, I D = 15 A
115
70
20
5.5
7
8
25
12
pF
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 75 V, R L = 5 Ω
I D ? 15 A, V GEN = 10 V, R G = 2.5 Ω
35
17
30
55
25
45
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C) b
Continuous Current
Pulsed Current
I S
I SM
15
25
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 15 A, V GS = 0 V
I F = 15 A, di/dt = 100 A/μs
0.9
55
5
0.13
1.5
85
8
0.34
V
ns
A
μC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71642
S-71662-Rev. B, 06-Aug-07
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SUP18N15-95-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 150V, 18A, Transistor Polarity:N Channel, Continuous Drain Cur |
| SUP-200 | 制造商:Sunhayato 功能描述: |
| SUP-2400 | 制造商:Distributed By MCM 功能描述:DirecTV B Band Converter 制造商:MCM 功能描述:B-BAND CONVERTER |
| SUP28N15-52 | 功能描述:MOSFET 150V 28A 120W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUP28N15-52_07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) 175 Celsius MOSFET |
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