参数资料
型号: V59C1G01164QAUF37H
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 16 DDR DRAM, PBGA92
封装: ROHS COMPLIANT, FBGA-92
文件页数: 50/79页
文件大小: 1028K
代理商: V59C1G01164QAUF37H
54
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
Asynchronous CKE Low Event
DRAM requires CKE to be maintained “high” for all valid operations as defined in this data sheet. If CKE
asynchronously drops “low” during any valid operation DRAM is not guaranteed to preserve the contents of
the memory array. If this event occurs, the memory controller must satisfy a time delay ( tdelay ) before turn-
ing off the clocks. Stable clocks must exist at the input of DRAM before CKE is raised “high” again. The
DRAM must be fully re-initialized as described the the initialization sequence starting with step 4.
The DRAM is ready for normal operation after the initialization sequence. The minimum time clocks needs
to be ON after CKE asynchronously drops low (the tdelay timing parameter) is equal to tIS + tCK + tIH.
Asynchronous CKE Low Event
CKE
CKE drops low due to an
asynchronous reset event
Clocks can be turned off after
this point
tdelay
CK, CK
stable clocks
相关PDF资料
PDF描述
V59C1G01164QALJ19AE 64M X 16 DDR DRAM, BGA92
V59C1G01164QALF37I 64M X 16 DDR DRAM, PBGA92
V59C1G01164QALF25H 64M X 16 DDR DRAM, PBGA92
V62C2801024L-70VI 128K X 8 STANDARD SRAM, 70 ns, PDSO32
V58C2128804SBT5B 16M X 8 DDR DRAM, 0.65 ns, PDSO66
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