参数资料
型号: V59C1G01164QAUF37H
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 16 DDR DRAM, PBGA92
封装: ROHS COMPLIANT, FBGA-92
文件页数: 58/79页
文件大小: 1028K
代理商: V59C1G01164QAUF37H
61
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Overshoot and Undershoot Specification
AC Overshoot / Undershoot Specification for Address and Control Pins
AC Overshoot / Undershoot Specification for Clock, Data, Strobe and Mask Pins
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.9
V
Maximum peak amplitude allowed for undershoot area
0.9
V
Maximum overshoot area above VDD
0.80
V.ns
Maximum undershoot area below VSS
0. 80
V.ns
Parameter
DDR2
-667
Units
Maximum peak amplitude allowed for overshoot area
0.5
V
Maximum peak amplitude allowed for undershoot area
0.5
V
Maximum overshoot area above VDDQ
0.23
V.ns
Maximum undershoot area below VSSQ
0. 23
V.ns
VDD
VSS
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
VDDQ
VSSQ
Overshoot Area
Undershoot Area
Maximum Amplitude
Time (ns)
Vo
lt
s
(
V
)
DDR2
-800
0.66
0. 66
-800
0.23
0. 23
-1066
0.5 (0.9)
0.19
1
0.5 (0.9)
1
DDR2
-1066
0.5
Note 1 The maximum requirements for peak amplitude were reduced from 0.9V to 0.5V. Register vendor datasheet will specifiy the
maximum over/undershoot induced in specific RDIMM applications. DRAM vendor datasheet will also specify the maximum oversh-
oot/undershoot that their DRAM can tolerate. This will allow the RDIMM supplier to understand whether the DRAM can tolerate the
overshoot that the register will induce in the specific RDIMM application.
相关PDF资料
PDF描述
V59C1G01164QALJ19AE 64M X 16 DDR DRAM, BGA92
V59C1G01164QALF37I 64M X 16 DDR DRAM, PBGA92
V59C1G01164QALF25H 64M X 16 DDR DRAM, PBGA92
V62C2801024L-70VI 128K X 8 STANDARD SRAM, 70 ns, PDSO32
V58C2128804SBT5B 16M X 8 DDR DRAM, 0.65 ns, PDSO66
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