- 您现在的位置：买卖IC网 > PDF目录140431 > W25Q20BWSNIP (WINBOND ELECTRONICS CORP) 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 PDF资料下载
参数资料
| 型号： | W25Q20BWSNIP |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.300 INCH, GREEN, PLASTIC, DIP-8 |
| 文件页数： | 17/70页 |
| 文件大小： | 2106K |
| 代理商： | W25Q20BWSNIP |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页当前第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页
W25Q20BW
- 24 -
8.2.10
Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by
a 24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
Figure 9. Read Data Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q64DWZEIP | 256K X 32 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W25Q64DWZPIG | 256K X 32 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
| W24512-70L | 64K X 8 STANDARD SRAM, 70 ns, PDIP32 |
| WPS256K4C-20RJM | 256K X 4 STANDARD SRAM, 20 ns, PDSO32 |
| WF1M32C-100G2C | 4M X 8 FLASH 12V PROM MODULE, 100 ns, CQMA68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q20BWUXIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWUXIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWZPIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20BWZPIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q20CLSNIG | 功能描述:IC FLASH SPI 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。