参数资料
| 型号： | W25Q40BWSNIG |
| 厂商： | Winbond Electronics |
| 文件页数： | 28/73页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SPI 4MBIT 8SOIC |
| 标准包装： | 100 |
| 系列： | SpiFlash® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 80MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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W25Q40BW
8.2.14
Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO 0 and IO 1 . It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to
input the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” b its (M7-0) after the input Address bits (A23-0), as shown in figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3- 0) are don’t care
(“x”). However, the IO pins should be high -impedance prior to the falling edge of the first data out clock.
If th e “Continuous Read Mode ” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after /CS
is raised and then lowered) does not require the BBh instruction code, as shown in figure 13b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode ” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 8.2.20 for detail descriptions).
Figure 13a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4 ? 10)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q40BWSNIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWSNIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWSSIG | 功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| W25Q40BWSSIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWUXIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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