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参数资料
| 型号： | W25Q80BVZPAG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 8M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 6 X 5 MM, GREEN, WSON-8 |
| 文件页数： | 37/75页 |
| 文件大小： | 1055K |
| 代理商： | W25Q80BVZPAG |
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W25Q80BV
- 42 -
DO
(IO
1)
9.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase
instruction will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (52h)
High Impedance
8
9
29
30
31
24-Bit Address
23
22
2
1
0
*
Mode 0
Mode 3
= MSB
*
Figure 22. 32KB Block Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q80BVSNIP | 8M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25X10AVDIAZ | 128K X 8 FLASH 2.7V PROM, PDIP8 |
| W25X16AVDAIG | 2M X 8 FLASH 2.7V PROM, PDIP8 |
| W25X16BVZPIG | 256K X 16 FLASH 2.7V PROM, PDSO8 |
| W25X20BLSNIG | 2M X 1 FLASH 2.7V PROM, PDSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q80BVZPAP | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BVZPIG | 功能描述:IC SPI FLASH 8MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W25Q80BVZPIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 8MBIT 104MHZ 8WSON |
| W25Q80BVZPIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q80BW | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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