参数资料
型号: W25Q80BWSNIG
厂商: Winbond Electronics
文件页数: 24/74页
文件大小: 0K
描述: IC FLASH SPI 8MBIT 8SOIC
标准包装: 100
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 8M(1M x 8)
速度: 80MHz
接口: SPI 串行
电源电压: 1.65 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
W25Q80BW
To complete the Write Status Register instruction, the /CS pin must be driven high after the eighth or
sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be
executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the CMP, QE and
SRP1 bits will be cleared to 0.
During non-volatile Status Register write operation (06h combined with 01h), after /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of t W (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status
Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of t SHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Please refer to 8.1 for detailed Status Register Bit descriptions. Factory default for all status Register bits
are 0.
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Mode 3
CLK
Mode 0
Mode 0
Instruction (01h)
Status Register 1 in
Status Register 2 in
DI
(IO 0 )
7
*
6
5
4
3
2
1
0
15
*
14
13
12
11
10
9
8
DO
High Impedance
(IO 1 )
* = MSB
Figure 8. Write Status Register Instruction Sequence Diagram
- 24 -
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