参数资料
型号: W25Q80BWSNIP
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 8M X 1 SPI BUS SERIAL EEPROM, PDSO8
封装: 3.81 MM, GREEN, PLASTIC, SOIC-8
文件页数: 51/71页
文件大小: 0K
代理商: W25Q80BWSNIP
W25Q80BW
Publication Release Date: January 26, 2011
- 55 -
Preliminary - Revision A
8.2.37 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory
locations. A Write Enable instruction must be executed before the device will accept the Program Security
Register Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low
then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte,
into the DI pin. The /CS pin must be held low for the entire length of the instruction while data is being
sent to the device.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #0*
00h
0 0 0 0
Byte Address
Security Register #1
00h
0 0 0 1
0 0 0 0
Byte Address
Security Register #2
00h
0 0 1 0
0 0 0 0
Byte Address
Security Register #3
00h
0 0 1 1
0 0 0 0
Byte Address
* Please note that Security Register 0 is Reserved by Winbond for future use. It is
recommended to use Security registers 1- 3 before using register 0.
The Program Security Register instruction sequence is shown in figure 35. The Security Register Lock
Bits (LB3-0) in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 9.1.9, 9.2.21 for detail descriptions).
Figure 35. Program Security Registers Instruction Sequence
Instruction (42h)
相关PDF资料
PDF描述
WPD1M16B-80TJC 1M X 16 FAST PAGE DRAM, 80 ns, PDSO42
WPD1M16C-80TJC 1M X 16 FAST PAGE DRAM, 80 ns, PDSO42
WPS512K8LT-85GM 512K X 8 STANDARD SRAM, 85 ns, PDSO32
WPDE4M4VB70MJI 4M X 4 EDO DRAM, 70 ns, PDSO24
WF2M32BI-90HC5A 8M X 8 FLASH 5V PROM MODULE, 90 ns, CHIP66
相关代理商/技术参数
参数描述
W25Q80BWSSIG 功能描述:IC FLASH SPI 8MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP(0.465",11.8mm 宽) 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8
W25Q80BWSSIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWUXIG 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWUXIP 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q80BWZPIG 功能描述:IC FLASH SPI 8MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)