参数资料
型号: W25X10BVZPIG
厂商: Winbond Electronics
文件页数: 30/51页
文件大小: 0K
描述: IC SPI FLASH 1MBIT 8WSON
标准包装: 100
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 1M (128K x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WSON(6x5)
包装: 管件
W25X10BV/20BV/40BV
9.2.18
Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC
Characteristics). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in figure 18.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-
down instruction will not be executed. After /CS is driven high, the power-down state will entered
within the time duration of t DP (See AC Characteristics). While in the power-down state only the
Release from Power-down / Device ID instruction, which restores the device to normal operation, will
be recognized. All other instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction makes the Power
Down state a useful condition for securing maximum write protection. The device always powers-up in
the normal operation with the standby current of ICC1.
Figure 18. Deep Power-down Instruction Sequence Diagram
- 30 -
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