参数资料
| 型号： | W29GL128CH9B |
| 厂商： | Winbond Electronics |
| 文件页数： | 15/67页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 128MBIT 90NS 64LFBGA |
| 标准包装： | 171 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 128M（16M x 8，8M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LBGA |
| 供应商设备封装： | 64-LFBGA（11x13） |
| 包装： | 管件 |
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W29GL128C
7.2.9
Erasing the Memory Array
Sector Erase and Chip Erase are the two possible types of erase operations executed on the memory
array. Sector Erase operation erases one or more selected sectors and this can be simultaneous.
Chip Erase operation erases the entire memory array, except for any protected sectors.
7.2.9.1
Sector Erase
The sector erase operation returns all selected sectors in memory to the “1” state, effectively clearing
all data. This action requires six instruction cycles to commence the erase operation. The unlock
sequence is the first two cycles, followed by the configuration cycle, the fourth and fifth are
also ”unlock cycles”, and the Sector Erase instruction is the sixth cycle. An internal 50μs time-out
counter is started once the sector erase instruction sequence has been completed. During this time,
additional sector addresses and Sector Erase commands may be issued, thus allowing for multiple
sectors to be selected and erased simultaneously. Once the 50μs time-out counter has reached its
limit, no additional command instructions will be accepted and the embedded sector erase algorithm
will commence.
Note, that the 50μs time-out counter restarts after every sector erase instruction sequence. The device
will abort and return to Read mode, if any instruction other than Sector Erase or Erase Suspend is
attempted during the time-out period.
Once the embedded sector erase algorithm begins, all instructions except Erase Suspend or
Hardware Reset will be ignored. The hardware reset will abort the erase operation and return the
device to the Read mode.
The embedded sector erase algorithm status can be verified by the following:
Status
Time-out period
In progress
Exceeded time limit
DQ7
0
0
0
DQ6
Toggling
Toggling
Toggling
DQ5
0
0
1
DQ3 1
0
1
1
DQ2
Toggling
Toggling
Toggling
RY/#BY 2
0
0
0
Table 7-4
Note :
Polling During Embedded Sector Erase Operation
1.
2.
3.
4.
The DQ3 status bit is the 50μs time-out indicator. When DQ3=0, the 50μs time-out counter has not yet reached zero
and the new Sector Erase instruction maybe issued to specify the address of another sector to be erased. When
DQ3=1, the 50μs time-out counter has expired and the Sector Erase operation has already begun. Erase Suspend is
the only valid instruction that maybe issued once the embedded erase operation is underway.
RY/#BY is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
When an attempt is made to erase only protected sector(s), the erase operation will abort thus preventing any data
changes in the protected sector(s). DQ7 will output “0” and DQ6 will toggle briefly (100μs or less) before aborting and
returning the device to Read mode. If unprotected sectors are also specified, however, they will be erased normally
and the protected sector(s) will remain unchanged.
DQ2 is a localized indicator showing a specified sector is undergoing erase operation or not. DQ2 toggles when user
reads at the addresses where the sectors are actively being erased (in erase mode) or to be erased (in erase
suspend mode).
Publication Release Date: August 2, 2013
9
Revision H
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W29GL128CH9B TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 64LFBGA |
| W29GL128CH9T | 功能描述:IC FLASH 128MBIT 90NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W29GL128CH9T TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 56TSOP |
| W29GL128CL9B | 功能描述:IC FLASH 128MBIT 90NS 64LFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| W29GL128CL9B TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 64LFBGA |
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