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参数资料
| 型号： | W3H128M72E-667SBM |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM, 1.25 ns, PBGA208 |
| 封装： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 25/32页 |
| 文件大小： | 988K |
| 代理商： | W3H128M72E-667SBM |
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W3H128M72E-XSBX
31
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Document Title
128M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
Revision History
Rev #
History
Release Date
Status
Rev 0
Initial Release
May 2008
Advanced
Rev 1
Changes (Pg. 1, 2, 22, 33)
1.1 Weight 4 grams max
1.2 Changed A0-12 to A0-13
1.3 Added input/output capacitance
1.4 Added BGA thermal resistance
September 2008
Advanced
Rev 2
Change (Pg. 1)
2.1 Change SPACE SAVINGS to space savings
October 2008
Preliminary
Rev 3
Change (Pg. 24)
3.1 Reduce DDR2 ICC7
CL6 from (1,975 to 1,580) mA
CL5 from (1,775 to 1,420) mA
CL4 from (1,775 to 1,420) mA
October 2008
Preliminary
Rev 4
Change (Pg. 1, 5, 6, 19, 22, 23, 30)
4.1 Remove "P" from FBGA, take out "Actual Size" off of
Figure 1
4.2 Remove VCCQ; and I/O + core; VCCQ is common to VCC in
VCC box
4.3 Change page 8 to page 7 in initialization paragraph
4.4 Change tWT to tWT
4.5 In BGA thermal resistance, change note to read - to obtain
the junction temperature increase, multiply the thermal
resistance by the power dissipated in each die in the MCP
4.6 In DC operating conditions add "and" to note 1
4.7 Put "/" in between Mbs to read Mb/s
4.8 Change data sheet to nal
December 2008
Final
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