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参数资料
| 型号： | W3H32M72E-667SB2M |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.65 ns, PBGA208 |
| 封装： | 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件页数： | 1/25页 |
| 文件大小： | 1062K |
| 代理商： | W3H32M72E-667SB2M |
W3H32M72E-XSB2X
November 2010 2010 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation (602) 437-1520 www.whiteedc.com
Rev. 3
www.microsemi.com
Microsemi Corporation reserves the right to change products or specications without notice.
FIGURE 1 – DENSITY COMPARISONS
CSP Approach (mm)
W3H32M72E-XSB2X
S
A
V
I
N
G
S
Area
5 x 209mm2 = 1,045mm2
320mm2
69%
I/O Count
5 x 90 balls = 450 balls
208 Balls
54%
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 20mm
1.0mm pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with clock
signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Single 1.8V ±0.1V supply
Programmable CAS latency: 3, 4, 5, or 6
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature Ranges
Organized as 32M x 72
Weight: W3H32M72E-XSB2X - 2.5 grams typical
BENEFITS
69% space savings vs. FPBGA
Reduced part count
54% I/O reduction vs FPBGA
Reduced trace lengths for lower parasitic capacitance
Suitable for hi-reliability applications
Upgradable to 64M x 72 density (contact factory for
information)
* This product is under development, is not qualied or characterized and is subject to change
without notice.
20
16
90
FBGA
11.0
19.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
W3J128M72G-XPBX
相关PDF资料 |
PDF描述 |
|---|---|
| W3H32M72E-667SBC | 32M X 72 DDR DRAM, 0.65 ns, PBGA208 |
| W3H64M16E-400BC | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H32M72E-667SB2M/T/R | 制造商:Microsemi Corporation 功能描述:PBGA,32M X72,DDR2 SDRAM, 1.8V - Tape and Reel |
| W3H32M72E-667SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H32M72E-667SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M72E-667SBM | 制造商:PMG/Microsemi 功能描述: |
| W3H32M72E-ES | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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