参数资料
型号: W9412G2CB-5
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 4M X 32 DDR DRAM, 0.6 ns, PBGA144
封装: 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144
文件页数: 15/49页
文件大小: 1936K
代理商: W9412G2CB-5
W9412G2CB
Publication Release Date:Jul. 07, 2008
- 22 -
Revision A11
8.5 Function Truth Table for CKE
CKE
CURRENT
STATE
n-1
n
CS RAS
CAS
WE
ADDRESS
ACTION
NOTES
H
X
INVALID
L
H
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
L
X
ILLEGAL
L
H
L
X
ILLEGAL
Self Refresh
L
X
Maintain Self Refresh
H
X
INVALID
L
H
X
Exit Power down->Idle after tIS
Power Down
L
X
Maintain power down mode
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power down
2
H
L
H
X
Enter Power down
2
H
L
H
X
Self Refresh
1
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
All banks Idle
L
X
Power down
H
X
Refer to Function Truth Table
H
L
H
X
Enter Power down
3
H
L
H
X
Enter Power down
3
H
L
H
X
ILLEGAL
H
L
H
L
X
ILLEGAL
H
L
X
ILLEGAL
Row Active
L
X
Power down
Any State
Other Than
Listed Above
H
X
Refer to Function Truth Table
Notes
:
1. Self refresh can enter only from the all banks idle state.
2. Power Down occurs when all banks are idle; this mode is referred to as precharge power down.
3. Power Down occurs when there is a row active in any bank; this mode is referred to as active power down.
Remark: H = High level, L = Low level, X = High or Low level (Don’t Care), V = Valid data
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