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参数资料
| 型号： | W9412G2CB-5 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 4M X 32 DDR DRAM, 0.6 ns, PBGA144 |
| 封装： | 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA-144 |
| 文件页数： | 3/49页 |
| 文件大小： | 1936K |
| 代理商： | W9412G2CB-5 |
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W9412G2CB
Publication Release Date:Jul. 07, 2008
- 11 -
Revision A11
7.2.5
Write with Auto-precharge Command
( RAS = “H”, CAS = “L”, WE = “L”, BA0, BA1 = Bank, A8 = “H”, A0 to A7 = Column Address)
The Write with Auto-precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
7.2.6
Read Command
( RAS = “H”, CAS = “L”, WE = “H”, BA0, BA1 = Bank, A8 = “L”, A0 to A7 = Column Address)
The Read command performs a Read operation to the bank designated by BA. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from CAS command in a clock cycle) must be programmed in the
Mode Register at power-up prior to the Read operation.
7.2.7
Read with Auto-precharge Command
( RAS = “H”, CAS = ”L”, WE = ”H”, BA0, BA1 = Bank, A8 = ”H”, A0 to A7 = Column Address)
The Read with Auto-precharge command automatically performs the Precharge operation after the
Read operation.
1) READA
≥ tRAS (min) – (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2) tRCD(min)
≤ READA < tRAS(min) – (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
7.2.8
Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “L”, BA1 = “L”, A0 to A11 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
7.2.9
Extended Mode Register Set Command
( RAS = “L”, CAS = “L”, WE = “L”, BA0 = “H”, BA1 = “L”, A0 to A11 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). Currently the only available mode in EMRS is DLL
enable/disable, decoded by A0. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
7.2.10 No-Operation Command
( RAS = “H”, CAS = “H”, WE = “H”)
The No-Operation command simply performs no operation (same command as Device Deselect).
相关PDF资料 |
PDF描述 |
|---|---|
| W9412G6IH-4 | 8M X 16 DDR DRAM, 0.65 ns, PDSO66 |
| W942508AH-8 | 32M X 8 DDR DRAM, 0.8 ns, PDSO66 |
| W942516AH-6 | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| W942516CH-75 | 16M X 16 DDR DRAM, 0.75 ns, PDSO66 |
| W9425G6DH-6F | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9412G2IB | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M × 4 BANKS × 32 BITS GDDR SDRAM |
| W9412G2IB4 | 制造商:WINBOND 制造商全称:Winbond 功能描述:Double Data Rate architecture; two data transfers per clock cycle |
| W9412G2IB-5 | 制造商:Winbond Electronics Corp 功能描述:8*16 DDR1 |
| W9412G6CH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9412G6IH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M × 4 BANKS × 16 BITS DDR SDRAM |
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