参数资料
型号: W9425G6EH-5
厂商: Winbond Electronics
文件页数: 15/54页
文件大小: 0K
描述: IC DDR-400 SDRAM 256MB 66TSSOPII
标准包装: 108
格式 - 存储器: RAM
存储器类型: DDR SDRAM
存储容量: 256M(16Mx16)
速度: 250MHz
接口: 并联
电源电压: 2.3 V ~ 2.7 V
工作温度: 0°C ~ 70°C
封装/外壳: 66-TSSOP(0.400",10.16mm 宽)
供应商设备封装: 66-TSOP II
包装: 托盘
W9425G6EH
7.10.2 Addressing Mode Select (A3)
The Addressing Mode can be one of two modes; Interleave mode or Sequential Mode, When the
A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both
addressing Mode support burst length 2, 4, and 8 words.
A3
0
1
ADDRESSING MODE
Sequential
Interleave
7.10.2.1. Addressing Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
ACCESS ADDRESS
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
BURST LENGTH
2 words (address bits is A0)
not carried from A0 to A1
4 words (address bit A0, A1)
Not carried from A1 to A2
8 words (address bits A2, A1 and A0)
Not carried from A2 to A3
7.10.2.2. Addressing Sequence for Interleave Mode
A Column access is started from the inputted column address and is performed by interleaving the
address bits in the sequence shown as the following.
Addressing Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
ACCESS ADDRESS
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
- 15 -
BURST LENGTH
2 words
4 words
8 words
Publication Release Date:Dec. 03, 2008
Revision A08
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