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| 型号： | W9425G6EH-5 |
| 厂商： | Winbond Electronics |
| 文件页数： | 3/54页 |
| 文件大小： | 0K |
| 描述： | IC DDR-400 SDRAM 256MB 66TSSOPII |
| 标准包装： | 108 |
| 格式 - 存储器： | RAM |
| 存储器类型： | DDR SDRAM |
| 存储容量： | 256M（16Mx16） |
| 速度： | 250MHz |
| 接口： | 并联 |
| 电源电压： | 2.3 V ~ 2.7 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 66-TSSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 66-TSOP II |
| 包装： | 托盘 |
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W9425G6EH
11.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8)..............................................................................45
11.12 Burst Read Stop (BL = 8) .................................................................................................................45
11.13 Read Interrupted by Write & BST (BL = 8) .......................................................................................46
11.14 Read Interrupted by Precharge (BL = 8) ..........................................................................................46
11.15 Write Interrupted by Write (BL = 2, 4, 8)...........................................................................................47
11.16 Write Interrupted by Read (CL = 2, BL = 8)......................................................................................47
11.17 Write Interrupted by Read (CL = 3, BL = 4)......................................................................................48
11.18 Write Interrupted by Precharge (BL = 8)...........................................................................................48
11.19 2 Bank Interleave Read Operation (CL = 2, BL = 2).........................................................................49
11.20 2 Bank Interleave Read Operation (CL = 2, BL = 4).........................................................................49
11.21 4 Bank Interleave Read Operation (CL = 2, BL = 2).........................................................................50
11.22 4 Bank Interleave Read Operation (CL = 2, BL = 4).........................................................................50
11.23 Auto Refresh Cycle ..........................................................................................................................51
11.24 Precharged/Active Power Down Mode Entry and Exit Timing ..........................................................51
11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing.................................51
11.26 Self Refresh Entry and Exit Timing...................................................................................................52
12.
PACKAGE SPECIFICATION .......................................................................................................................53
12.1
TSOP 66 lI – 400 mil ........................................................................................................................53
13.
REVISION HISTORY ...................................................................................................................................54
Publication Release Date:Dec. 03, 2008
-3-
Revision A08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
| W9425G6JB-5 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin TFBGA 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256Mb DDRI DRAM ,200MHZ, BGA |
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
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