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| 型号： | W9425G6JB-5 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封装： | 8 X 13 MM, ROHS COMPLIANT, TFBGA-60 |
| 文件页数： | 12/50页 |
| 文件大小： | 852K |
| 代理商： | W9425G6JB-5 |
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W9425G6JB
Publication Release Date: Oct. 08, 2010
- 2 -
Revision A01
7.10.1 Burst Length field (A2 to A0) .................................................................................. 14
7.10.2 Addressing Mode Select (A3)................................................................................. 15
7.10.3 CAS Latency field (A6 to A4).................................................................................. 16
7.10.4 DLL Reset bit (A8) .................................................................................................. 16
7.10.5 Mode Register /Extended Mode register change bits (BA0, BA1) ......................... 16
7.10.6 Extended Mode Register field ................................................................................ 16
7.10.7 Reserved field......................................................................................................... 16
8.
OPERATION MODE .................................................................................................................... 17
8.1
Simplified Truth Table........................................................................................................ 17
8.2
Function Truth Table ......................................................................................................... 18
8.3
Function Truth Table for CKE............................................................................................ 21
8.4
Simplified Stated Diagram ................................................................................................. 22
9.
ELECTRICAL CHARACTERISTICS ............................................................................................ 23
9.1
Absolute Maximum Ratings............................................................................................... 23
9.2
Recommended DC Operating Conditions ......................................................................... 23
9.3
Capacitance....................................................................................................................... 24
9.4
Leakage and Output Buffer Characteristics ...................................................................... 24
9.5
DC Characteristics............................................................................................................. 25
9.6
AC Characteristics and Operating Condition..................................................................... 26
9.7
AC Test Conditions............................................................................................................ 27
10. SYSTEM CHARACTERISTICS FOR DDR SDRAM .................................................................... 29
10.1 Table 1: Input Slew Rate for DQ, DQS, and DM............................................................... 29
10.2 Table 2: Input Setup & Hold Time Derating for Slew Rate................................................ 29
10.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate.................................... 29
10.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate .................... 29
10.5 Table 5: Output Slew Rate Characteristics (X16 Devices only) ........................................ 29
10.6 System Notes: ................................................................................................................... 30
11. TIMING WAVEFORMS ................................................................................................................ 32
11.1 Command Input Timing ..................................................................................................... 32
11.2 Timing of the CLK Signals ................................................................................................. 32
11.3 Read Timing (Burst Length = 4) ........................................................................................ 33
11.4 Write Timing (Burst Length = 4) ........................................................................................ 34
11.5 DM, DATA MASK (W9425G6JB) ...................................................................................... 35
11.6 Mode Register Set (MRS) Timing ..................................................................................... 36
11.7 Extend Mode Register Set (EMRS) Timing....................................................................... 37
11.8 Auto-precharge Timing (Read Cycle, CL = 2) ................................................................... 38
11.9 Auto-precharge Timing (Read cycle, CL = 2), continued .................................................. 39
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PDF描述 |
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| W9425G8DH-6 | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
| W946432AD-6 | 2M X 32 DDR DRAM, 0.1 ns, PQFP100 |
| W947D6HBHX6E | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| W9602BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
| W9425G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256MB DDR,250MHZ,2.5V , TSOP 66PIN GREEN |
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