- 您现在的位置：买卖IC网 > PDF目录203637 > W9425G6JB-5 (WINBOND ELECTRONICS CORP) DDR DRAM, PBGA60 PDF资料下载
参数资料
| 型号： | W9425G6JB-5 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封装： | 8 X 13 MM, ROHS COMPLIANT, TFBGA-60 |
| 文件页数： | 34/50页 |
| 文件大小： | 852K |
| 代理商： | W9425G6JB-5 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页当前第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页
W9425G6JB
Publication Release Date: Oct. 08, 2010
- 4 -
Revision A01
1. GENERAL DESCRIPTION
W9425G6JB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words
× 4 banks × 16 bits. W9425G6JB delivers a data bandwidth
of up to 400M words per second (-5) compliant to the DDR400/CL3 specification.
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9425G6JB is ideal for main memory in
high performance applications.
2. FEATURES
2.5V
±0.2V Power Supply
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8S refresh interval (8K/ 64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in 60 Ball TFBGA, using Lead free materials with RoHS compliant
相关PDF资料 |
PDF描述 |
|---|---|
| W9425G8DH-6 | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
| W946432AD-6 | 2M X 32 DDR DRAM, 0.1 ns, PQFP100 |
| W947D6HBHX6E | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| W9602BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
| W9605BB | PUSHBUTTON SWITCH, SPST, MOMENTARY, 10A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6JB-5 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ |
| W9425G6JB-5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9425G6JB-5I TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR SDRAM X16, 200MHZ, IN |
| W9425G6JH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6JH-4 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 66-Pin TSOP-II 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY 制造商:Winbond 功能描述:16MX16,256MB DDR,250MHZ,2.5V , TSOP 66PIN GREEN |
发布紧急采购，3分钟左右您将得到回复。