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| 型号： | W9812G6DH-75 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封装： | 0.400 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 |
| 文件页数： | 23/44页 |
| 文件大小： | 1221K |
| 代理商： | W9812G6DH-75 |
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W981216DH/ W9812G6DH
Publication Release Date: June 6, 2005
- 3 -
Revision A08
1. GENERAL DESCRIPTION
W981216DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
2M words
× 4 banks × 16 bits. Using pipelined architecture and 0.13 m process technology,
W981216DH delivers a data bandwidth of up to 166M words per second (-6). For different application,
W981216DH is sorted into four speed grades: -6, -7, -75, and -8H. The –6 is compliant to the
166Mhz/CL3 specification, the -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -
75 is compliant to the PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W981216DH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V
± 0.3V Power Supply
Up to 166 MHz Clock Frequency
2,097,152 Words
× 4 banks × 16 bits organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM
Auto-precharge and Controlled Precharge
4K Refresh cycles / 64 mS
Interface: LVTTL
Packaged in TSOP II 54 pin, 400 mil - 0.80
W9812G6DH is using Lead free materials, RoHS compliant
AVAILABLE PART NUMBER
PART NUMBER
SPEED
MAXIMUM SELF REFRESH
CURRENT
OPERATING
TEMPERATURE
W981216DH-6
166MHz/CL3
3 mA
0°C - 70°C
W981216DH-7
PC133/CL2
3 mA
0°C - 70°C
W981216DH-75
PC133/CL3
3mA
0°C - 70°C
W981216DH-8H
PC100/CL2
3 mA
0°C - 70°C
相关PDF资料 |
PDF描述 |
|---|---|
| W9812G6IH-6C | 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| W9816G6IB-6 | 1M X 16 SYNCHRONOUS DRAM, 5 ns, PBGA60 |
| W9816G6IB-7 | 1M X 16 SYNCHRONOUS DRAM, 5 ns, PBGA60 |
| W9816G6IH-6 | 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50 |
| W982504AH-7 | 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9812G6GH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6 | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6C | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M X 4 BANKS X 16 BITS SDRAM |
| W9812G6GH-75 | 制造商:Winbond Electronics Corp 功能描述:8M * 16 SDRAM |
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