参数资料
型号: 2N7002/T1
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封装: PLASTIC PACKAGE-3
文件页数: 10/11页
文件大小: 87K
代理商: 2N7002/T1
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
8 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
7.
Package outline
Fig 13. Package outline SOT23
UNIT
A1
max.
bp
cD
E
e1
HE
Lp
Qw
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
IEC
JEDEC
JEITA
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w M
v M A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads
SOT23
相关PDF资料
PDF描述
2N7002K 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002KT/R13 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002T/R 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002/T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
2N7002-T 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相关代理商/技术参数
参数描述
2N7002-T1-E3 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236
2N7002-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7002-T1-ER 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R
2N7002-T1-GE3 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube