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参数资料
| 型号： | 2N7002/T1 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 87K |
| 代理商： | 2N7002/T1 |
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
3 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
Fig 1.
Normalized total power dissipation as a
function of solder point temperature
Fig 2.
Normalized continuous drain current as a
function of solder point temperature
Tsp =25 °C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03aa17
0
40
80
120
0
50
100
150
200
Tsp (
°C)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (
°C)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
------------------------
100 %
×
=
I
der
I
D
I
D25 C
°
()
---------------------
100 %
×
=
003aab350
10
-2
10
-1
1
10
1
10
2
VDS (V)
ID
(A)
DC
1 ms
100 s
Limit RDSon = VDS / ID
10 ms
100 ms
10 s
tp =
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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