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参数资料
| 型号： | 2N7002/T1 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/11页 |
| 文件大小： | 87K |
| 代理商： | 2N7002/T1 |
Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 April 2006
Document number: 2N7002_6
Published in The Netherlands
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
14. Contents
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7002K | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002KT/R13 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002T/R | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002/T3 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 2N7002-T | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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