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参数资料
| 型号： | 2N7002/T1 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 6/11页 |
| 文件大小： | 87K |
| 代理商： | 2N7002/T1 |
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
4 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
5.
Thermal characteristics
[1]
Mounted on a printed-circuit board; minimum footprint; vertical in still air
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance from junction to solder point
see Figure 4
-
150
K/W
Rth(j-a)
thermal resistance from junction to ambient
[1] -
-
350
K/W
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration
003aab351
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
tp (s)
Zth(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
δ =0.5
0.02
tp
T
P
t
tp
T
δ =
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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