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参数资料
| 型号： | 2N7002/T1 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 87K |
| 代理商： | 2N7002/T1 |
2N7002_6
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 06 — 28 April 2006
2 of 11
Philips Semiconductors
2N7002
N-channel TrenchMOS FET
3.
Ordering information
4.
Limiting values
Table 2:
Ordering information
Type number
Package
Name
Description
Version
2N7002
TO-236AB
plastic surface mounted package; 3 leads
SOT23
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25
°C ≤ T
j ≤ 150 °C
-
60
V
VDGR
drain-gate voltage (DC)
25
°C ≤ T
j ≤ 150 °C; RGS =20k
-60
V
VGS
gate-source voltage
-
±30
V
VGSM
peak gate-source voltage
tp ≤ 50 s; pulsed; duty cycle = 25 %
-
±40
V
ID
drain current
-
300
mA
-
190
mA
IDM
peak drain current
-
1.2
A
Ptot
total power dissipation
-
0.83
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Source-drain diode
IS
source current
Tsp =25 °C
-
300
mA
ISM
peak source current
Tsp =25 °C; pulsed; tp ≤ 10 s
-
1.2
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-T1-E3 | 功能描述:MOSFET 60V 0.115A 0.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N TO-236 |
| 2N7002-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N7002-T1-ER | 制造商:Vishay Intertechnologies 功能描述:SOT23 NCH MOSFET 60V 7.5R |
| 2N7002-T1-GE3 | 功能描述:MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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