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参数资料
| 型号： | 70T3399S133DD |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 |
| 封装： | 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 |
| 文件页数： | 28/28页 |
| 文件大小： | 429K |
| 代理商： | 70T3399S133DD |
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6.42
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
9
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Unit
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
VTERM(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3)
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
5652 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD= 2.5V ± 100mV)
Symbol
Parameter
Test Conditions
70T3339/19/99S
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDDQ = Max., VIN = 0V to VDDQ
___
10
A
|ILI|
JTAG & ZZ Input Leakage Current(1,2)
VDD = Max., VIN = 0V to VDD
___
±30
A
|ILO|
Output Leakage Current(1,3)
CE0
= VIH or CE1 = VIL, VOUT = 0V to VDDQ
___
10
A
VOL (3.3V)
Output Low Voltage(1)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage(1)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage(1)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage(1)
IOH = -2mA, VDDQ = Min.
2.0
___
V
5652 tbl 08
NOTES:
1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details.
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
Capacitance(1)
(TA = +25°C, f = 1.0MHz) PQFP ONLY
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
8
pF
COUT(3)
Output Capacitance
VOUT = 3dV
10.5
pF
5652 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
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