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参数资料
| 型号： | 70T3399S133DD |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144 |
| 封装： | 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144 |
| 文件页数： | 8/28页 |
| 文件大小： | 429K |
| 代理商： | 70T3399S133DD |
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6.42
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
16
Timing Waveform of Pipelined Read-to-Write-to-Read
(OE = VIL)(2)
Timing Waveform of Pipelined Read-to-Write-to-Read (OE Controlled)(2)
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.
3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
DATAIN
Dn + 2
CE0
CLK
5652 drw 11
Qn
Qn + 3
DATAOUT
CE1
UB, LB
tCD2
tCKHZ
tCKLZ
tCD2
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
tCH2
tCL2
tCYC2
READ
NOP
READ
tSD tHD
(3)
(1)
tSW tHW
WRITE
(4)
,
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
DATAIN
Dn + 3
Dn + 2
CE0
CLK
5652 drw 12
DATAOUT
Qn
Qn + 4
CE1
UB, LB
OE
tCH2
tCL2
tCYC2
tCKLZ
tCD2
tOHZ
tCD2
tSD
tHD
READ
WRITE
READ
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
(3)
(1)
tSW tHW
(4)
,
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
相关PDF资料 |
PDF描述 |
|---|---|
| 70TPS12 | 75 A, 1200 V, SCR, TO-274AA |
| 70TPS16 | 75 A, 1600 V, SCR, TO-274AA |
| 70TPS16 | 75 A, 1600 V, SCR, TO-274AA |
| 70TPS16PBF | 75 A, 1600 V, SCR, TO-274AA |
| 70TPS12PBF | 75 A, 1200 V, SCR, TO-274AA |
相关代理商/技术参数 |
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| 70T3399S166BC | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 12ns/3.6ns 256-Pin CABGA Tray 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 12NS/3.6NS 256BGA - Rail/Tube |
| 70T3399S166BC8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 12ns/3.6ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 12NS/3.6NS 256BGA - Tape and Reel |
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| 70T3399S166BF8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Dual 2.5V 2M-Bit 128K x 18 12ns/3.6ns 208-Pin FBGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC DUAL 2.5V 2.25MBIT 128KX18 12NS/3.6NS 208FPBGA - Tape and Reel |
| 70T3399S200BC | 功能描述:静态随机存取存储器 RoHS:否 制造商:IDT 存储容量: 组织: 访问时间: 电源电压-最大: 电源电压-最小: 最大工作电流: 最大工作温度: 最小工作温度: 安装风格: 封装 / 箱体: 封装: |
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