参数资料
型号: 73S1210F-68IMR/F/P
厂商: Maxim Integrated Products
文件页数: 32/126页
文件大小: 0K
描述: IC SMART CARD READER PROG 68-QFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
系列: 73S12xx
核心处理器: 80515
芯体尺寸: 8-位
速度: 24MHz
连通性: I²C,智能卡,UART/USART
外围设备: LED,POR,WDT
输入/输出数: 8
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 6.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 68-VFQFN 裸露焊盘
包装: 带卷 (TR)
DS_1210F_001
73S1210F Data Sheet
Rev. 1.4
13
Table 3: Flash Special Function Registers
Register
SFR
Address
R/W
Description
ERASE
0x94
W
This register is used to initiate either the Flash Mass Erase cycle or the
Flash Page Erase cycle. Specific patterns are expected for ERASE in
order to initiate the appropriate Erase cycle (default = 0x00).
0x55 – Initiate Flash Page Erase cycle. Must be proceeded by a write
to PGADDR @ SFR 0xB7.
0xAA – Initiate Flash Mass Erase cycle. Must be proceeded by a write
to FLSH_MEEN @ SFR 0xB2 and the debug port must be
enabled.
Any other pattern written to ERASE will have no effect.
PGADDR
0xB7
R/W
Flash Page Erase Address register containing the flash memory page
address (page 0 through 127) that will be erased during the Page Erase
cycle (default = 0x00). Note: the page address is shifted left by one bit
(see detailed description above).
Must be re-written for each new Page Erase cycle.
FLSHCTL
0xB2
R/W
Bit 0 (FLSH_PWE): Program Write Enable:
0 – MOVX commands refer to XRAM Space, normal operation (default).
1 – MOVX @DPTR,A moves A to Program Space (Flash) @ DPTR.
This bit is automatically reset after each byte written to flash. Writes to
this bit are inhibited when interrupts are enabled.
W
Bit 1 (FLSH_MEEN): Mass Erase Enable:
0 – Mass Erase disabled (default).
1 – Mass Erase enabled.
Must be re-written for each new Mass Erase cycle.
R/W
Bit 6 (SECURE):
Enables security provisions that prevent external reading of flash
memory and CE program RAM. This bit is reset on chip reset and may
only be set. Attempts to write zero are ignored.
Internal Data Memory: The Internal data memory provides 256 bytes (0x00 to 0xFF) of data memory.
The internal data memory address is always one byte wide and can be accessed by either direct or
indirect addressing. The Special Function Registers occupy the upper 128 bytes. This SFR area is
available only by direct addressing. Indirect addressing accesses the upper 128 bytes of Internal
RAM.
The lower 128 bytes contain working registers and bit-addressable memory. The lower 32 bytes form
four banks of eight registers (R0-R7). Two bits on the program memory status word (PSW) select which
bank is in use. The next 16 bytes form a block of bit-addressable memory space at bit addresses 0x00-
0x7F. All of the bytes in the lower 128 bytes are accessible through direct or indirect addressing. Table 4
shows the internal data memory map.
相关PDF资料
PDF描述
73S1215F-68IMR/F/P IC SMART CARD READER PROG 68-QFN
73S1217F-68IMR/F/P IC SMART CARD READER PROG 68-QFN
73S1217F-68MR/F/PE IC SOC SMART CARD READER 68QFN
73S8010C-ILR/F IC SMART CARD INTERFACE 28-SOIC
73S8010R-ILR/F IC SMART CARD INTERFACE 28-SOIC
相关代理商/技术参数
参数描述
73S1210F-68M/F/PB 制造商:Maxim Integrated Products 功能描述:- Trays
73S1210F-68M/F/PG 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
73S1210F-68M/F/PH 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
73S1210F-68M/F/PJ 制造商:Maxim Integrated Products 功能描述:SCR+PPAD/SRL INTFC/PWR MGT-3.11CODE - Rail/Tube
73S1210F-68MR/F/PG 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT