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参数资料
| 型号： | A29DL324SERIES |
| 英文描述： | 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit |
| 中文描述： | 32兆位的CMOS低电压双操作闪存分字节由8位（字节模式）/ 200万词由16位 |
| 文件页数： | 22/46页 |
| 文件大小： | 467K |
| 代理商： | A29DL324SERIES |
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A29DL323 Series
PRELIMINARY (May, 2002, Version 0.0)
22
AMIC Technology, Inc.
Program Suspend / Resume Commands
This command is used to suspend automatic programming.
Addresses not being programmed to while programming is
suspended can be read.
Sector erase (including the timeout period) and data program
operations can be both suspended. Chip erase operations
cannot be suspended.
1
μ
s is required between when the command sequence is
programmed and when the automatic program operation is
suspended.
The execution status of an automatic program operation can
be determined using a hardware sequence flag (I/O
7
, I/O
6
pins.) refer to I/O
7
(Data polling) and I/O
6
(Toggle Bit).
To resume an automatic program operation, write the resume
command (30H) while the operation is suspended.
Caution about Program Suspend / Resume
Commands
If automatic program resume and suspend are repeated at
intervals of less than 5
μ
s, the program operation may not be
correctly completed.
Chip Erase Command Sequence
This command is used to erase the entire chip.
Following command sequence write, erase is performed
after "0" is written to all memory cells and verification is
performed, using the automatic erase function. Program
before erase and control from external are not required.
During automatic erase, all commands that have been
written are ignored. However, automatic erase is
interrupted by hardware reset. Since erase is not
guaranteed in this case, execute the chip erase
command again after reset is completed.
Upon completion of automatic erase, the device returns
to read mode.
The automatic erase operation status can be determined
with the hardware sequence flags (I/O
7
, I/O
6
, RY/
BY
pins).
See sections “I/O
7
(Data Polling)”, “I/O
6
(Toggle Bit)”,
and “RY/
BY
(Ready /
Busy
)”.
For the timing waveform and flow chart, refer to Timing
Waveform for Sector / Chip Erase and Figure 4.
Sector Erase Command Sequence
This command is used to erase data in sector units.
"0" is written to the entire sector whose data is to be erased by
the automatic erase function after the command sequence has
been written, and erase is executed after verification has been
performed. Programming before erase and external control are
not necessary.
The timeout period of sector erase starts when erase
command 30H and the address of the sector to be erased are
written at the sixth bus cycle. When this timeout period (50
μ
s)
has elapsed, the device automatically starts erasing.
Two or more sectors can be selected and erased at the same
time by additionally writing erase command 30H and the
address of the sector whose data is to be erased during the
timeout period. In this case, the timeout period starts again
after the last erase command has been written.
If a protected sector and a sector that is not protected are
included in the selected sectors, only the sector that is not
protected is erased and the protected sector is ignored.
If a command other than the sector erase or erase suspend
command is input during the timeout period, the device is reset
to the read mode. If the timeout period has elapsed and erase
has started, any command other than the erase suspend
command is ignored. However, erase is stopped if hardware
reset is executed. In this case, sector erase is not guaranteed.
Execute the sector erase command again after completion of
reset.
When automatic erasure has been completed, the device
returns to the read mode.
Completion of automatic sector erase can be reported to the
host system by using the data polling function of I/O
7
, toggle
bit function of I/O
6
, and RY/
BY
pin. Sector erase is started
after the lapse of the timeout period that is started from the
rising of the
WE
or
CE
pulse, whichever earlier, of the last
sector erase command and is completed when the data of I/O
7
is set to "1" (refer to Hardware Sequence Flags). The device
returns to the read mode. Data polling and toggle bit function
in any address of the sector that is to be erased. The time
required to erase two or more sectors is "(sector programming
time + sector erase time) x number of sectors". If two or more
sectors of different banks are erased, a read operation from a
bank (i.e., dual operation) cannot be executed.
For the timing waveform and flow chart, refer to Timing
Waveform for Sector / Chip Erase and Figure 4.
START
Write Erase
Command
Sequence
Data Poll
from System
Data = FFh
Erasure Completed
Yes
No
Figure 4. Sector / Chip Erase Flow Chart
相关PDF资料 |
PDF描述 |
|---|---|
| A29L040SERIES | 512K X 8 Bit CMOS 3.0 Volt-only. Uniform Sector Flash Memory |
| A29L160SERIES | 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L400SERIES | 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A29L800SERIES | 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory |
| A31-1 | 10 TO 2000 MHz CECASCADABLE AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| A29DL324TG-120 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL324TG-70 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL324TG-80 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL324TG-90 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| A29DL324TV-120 | 制造商:AMICC 制造商全称:AMIC Technology 功能描述:32 Megabit (4M x 8-Bit/2M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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