参数资料
型号: A29DL324SERIES
英文描述: 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
中文描述: 32兆位的CMOS低电压双操作闪存分字节由8位(字节模式)/ 200万词由16位
文件页数: 36/46页
文件大小: 467K
代理商: A29DL324SERIES
A29DL323 Series
PRELIMINARY (May, 2002, Version 0.0)
36
AMIC Technology, Inc.
Timing Waveform for Dual Operation
Address
(Input)
BA1
Input
BA2
BA1
BA2
BA1
BA2
Output
Input
Output
Status
Output
t
RC
t
WC
t
RC
t
WC
t
RC
t
WC
t
AS
t
AH
t
ACC
t
CEPH
t
AHT
t
AS
t
DF
t
DF
t
CE
t
OE
t
OEH
t
WP
t
GHWL
t
DH
t
DS
CE
(Input)
OE
(Input)
WE
(Input)
I/O
(Input / Outpu)
Timing Waveform for Write Cycle (
WE
Controlled)
Addresses
(Input)
CE
(Input)
OE
(Input)
WE
(Input)
I/O (Input / Output)
555H
PA
D
OUT
I/O
7
Data Polling
Note :
1. This timing waveform shows the last two write cycles among the program command sequence's four write cycles, and data polling.
2. This timing waveform shows the WORD mode's case. In the BYTE mode, address to be input is different from the WORD mode.
See Table 8. Command Sequence.
3. PA : Program address
PD : Program data
I/O
7
: The output of the complement of the data written to the device.
D
OUT
: The output of the data written to the device.
t
BPG
or
t
WPG
t
AS
t
WC
t
WP
t
CS
t
WPH
t
DH
PA
3rd and 4th write cycle
t
AH
t
RC
PD
A0H
D
OUT
t
CE
t
OE
t
OH
t
GHWL
t
CH
t
DS
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