参数资料
型号: A29DL324SERIES
英文描述: 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
中文描述: 32兆位的CMOS低电压双操作闪存分字节由8位(字节模式)/ 200万词由16位
文件页数: 32/46页
文件大小: 467K
代理商: A29DL324SERIES
A29DL323 Series
PRELIMINARY (May, 2002, Version 0.0)
32
AMIC Technology, Inc.
Write Cycle (Program / Erase) (continued)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
CE
pulse width high for toggle bit
t
CEPH
20
ns
OE
pulse width high for toggle bit
t
OEPH
20
ns
Voltage transition time
t
VLHT
4
μ
s
ns
2
Rise time to V
ID
(
RESET
)
t
VIDR
500
3
Rise time to V
ACC
(
WE
(ACC))
Erase timeout time
t
VACCR
500
ns
2
t
TOW
50
μ
s
μ
s
4
Erase suspend transition time
t
SPD
20
4
Notes:
1. The preprogramming time prior to the erase operation is not included.
2. Sector group protection and accelerated mode only.
3. Sector group protection only.
4. Table only.
Write operation (Erase / Program) Performance
Parameter
Description
Min.
Typ.
Max.
Unit
Sector erase time
Chip erase time
Byte programming time
Excludes programming time prior to erasure
Excludes programming time prior to erasure
Excludes system-level overhead
0.7
50
9
5
s
s
200
μ
s
μ
s
s
Word programming time
Excludes system-level overhead
11
200
BYTE mode
40
Chip programming time
Excludes system-level overhead
WORD mode
25
Accelerated programming time
Excludes system-level overhead
7
150
μ
s
cycle
Erase / Program cycle
1,000,000
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