参数资料
型号: A29DL324SERIES
英文描述: 32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit
中文描述: 32兆位的CMOS低电压双操作闪存分字节由8位(字节模式)/ 200万词由16位
文件页数: 27/46页
文件大小: 467K
代理商: A29DL324SERIES
A29L323 Series
PRELIMINARY (May, 2002, Version 0.0)
27
AMIC Technology, Inc.
I/O
2
: Toggle Bit II
Toggle bit II is a function that determines the status of
automatic erase (or erase suspend) is in progress for a
particular sector by using I/O
2
.
I/O
2
is toggled when continuous read is performed from
addresses in a sector during automatic erase (or erase
suspend). Either
OE
or
CE
is used to control continuous
read.
When program to a sector that is not subject to erase
suspend is attempted during erase suspend, read from
sectors that are not subject to erase suspend cannot be
performed until program is completed. In this case, "1" will
be output to I/O
2
if a continuous read is performed from an
address in a sector other than an erased sector.
In this way, it is possible to determine the status of
automatic erase (including erase suspend) is in progress for
sectors specified using I/O
2
, but whether the state is erase in
progress or erase suspend cannot be determined with I/O
2
.
To determine this, I/O
6
(Toggle Bit) must be used. See
section “I/O
6
(Toggle Bit)”.
For the timing waveform, refer to Timing Waveform for I/O
2
vs. I/O
6
.
I/O5 : Exceeding Timing Limits
If the program / erase time exceeds the prescribed number
of pulses during automatic program / erase (exceeding
timing limit), "1" is output to I/O
5
and automatic program /
erase failure is indicated.
Moreover, if overwriting "0" to "1" is attempted, the device
judges data overwrite to be impossible, and "1" is output to
I/O
5
when the timing limit is exceeded.
When this happens, execute command reset.
I/O3 : Sector Erase Timer
A 50
μ
s timeout period occurs following write with the sector
erase command sequence before automatic erase starts.
During this timeout period, "0" is output to I/O
3
. When
automatic erase starts upon completion of the timeout
period, "1" is output to I/O
3
.
If sector erase is performed, first confirm whether the device
has received a command by using I/O
7
(Data Polling) or I/O
6
(Toggle Bit). Then, using I/O
3
, check whether automatic
erase has started. If I/O
3
is "0", the timeout period is not
over, and so it is possible to add sectors to erase. If I/O
3
is
"1", automatic erase starts and other commands (except
erase suspend) are ignored until erase is completed.
If a sector to erase is added during the sector erase timeout
period, it is recommended to check I/O
3
prior to and
following the addition. If I/O
3
is "1" following the addition,
that addition may not be accepted.
RY
BY
: Read/
Busy
The RY/
BY
is a dedicated output pin used to check the
status of automatic program / erase is in progress.
During automatic program / erase, "0" is output to the RY
/
BY
. If "1" is output, this signifies that the device is either in
the read mode (including erase suspend) or standby mode.
Since the RY/
BY
is an open-drain output pin, it is possible
to connect several RY/
BY
in series by connecting a pull-up
resistor to VCC.
For the timing waveform, refer to Timing Waveform for
RY/
BY
(Ready /
Busy
).
I/O
7
=Toggle
START
Read (I/O
0
to I/O
7
)
An=Any Address in the Bank Being Executed
I/O
7
=Toggle
FAIL
No
Read (I/O
0
to I/O
7
)
An=Any Address in the Bank Being Executed
I/O
5
=1
Yes
No
PASS
Yes
No
Figure 7. Toggle Bit Flow Chart
No
相关PDF资料
PDF描述
A29L040SERIES 512K X 8 Bit CMOS 3.0 Volt-only. Uniform Sector Flash Memory
A29L160SERIES 2M X 8 Bit / 1M X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory
A29L400SERIES 512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory
A29L800SERIES 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only. Boot Sector Flash Memory
A31-1 10 TO 2000 MHz CECASCADABLE AMPLIFIER
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