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| 型号： | A3944KLPTR-T |
| 厂商： | Allegro Microsystems Inc |
| 文件页数： | 28/31页 |
| 文件大小： | 0K |
| 描述： | IC PREDRIVER MOSFET 6CH TSSOP |
| 标准包装： | 8,000 |
| 配置： | 低端 |
| 输入类型： | 并行/串行 |
| 延迟时间： | 200ns |
| 电流 - 峰： | 50mA |
| 配置数： | 6 |
| 输出数： | 6 |
| 电源电压： | 6 V ~ 40 V |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 28-TSSOP 裸露焊盘 |
| 包装： | 带卷 (TR) |
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A3944
Quiescent Dissipation
Automotive, Low Side FET Pre-Driver
As an example, the maximum likely switching losses can be
The quiescent dissipation for each supply is the simply product of
the supply current and the supply voltage:
P DD = V DD × I DDQ
P BB = V BB × I BBQ
P BR = V DR × I DRQ
From the Electrical Characteristics table specification this gives
the total maximum quiescent dissipation of 131 mW when V DD
and V DR are 5 V and V BB is 24 V. At 12 V this drops to 83 mW.
Channel Switching Dissipation
The dissipation produced by switching each channel on or off is
calculated by summing the energy passing through the gate drive
output to and from the gate of the external MOSFET over time.
The energy transferred to the gate is given by:
estimated by using a reasonably large MOSFET total charge of
100 nC and a PWM frequency of 10 kHz. With no gate resistor
the dissipation in the A3944 due to switching losses for a single
channel will be approximately 5 mW.
Channel Diagnostic Dissipation
Each channel has three current generators that are used to deter-
mine the state of the load during the off-state for the channel.
Under normal load conditions the power dissipated is limited to
the product of the pull-down current source and the difference
between the load supply and the open load clamp voltage. For
example, with a 24 V load supply, this would contribute a maxi-
mum of 80 μ A × 9.2 V = 0.8 mW. At 12 V this drops to 0.2 mW.
However, the worst case dissipation will occur when the load
is not connected and a capacitor is attached to the diagnostic
where
E SW =
Q g V G
2
(23)
feedback terminal for the channel, DRNx. As for the switching
losses, the dissipation can be calculated by summing the energy
transferred to the capacitor over time. In this case the energy
Q g is the total MOSFET gate charge and
transferred is:
V G is the MOSFET gate voltage when on.
This is the energy transferred through the gate drive each time
a MOSFET is switched on or off. The total power due to this
where
E D =
C D V 2 OCL
2
(26)
energy transfer is calculated by multiplying the energy by the
number of switching events per second. The number of switching
events per second is twice the PWM frequency, so the dissipation
due to switching losses becomes:
C D is the value of the DRNx capacitor and
V OCL is the offset clamp voltage.
This is the energy transferred through the current source each
P SW = Q g V G f PWM
where f PWM is the PWM frequency for the channel.
(24)
time a MOSFET is switched off. The total power due to this
energy transfer is calculated by multiplying this energy by the
number of switching events per second. The number of switching
(25)
P SW = Q g V G f PWM
C D V 2 OCL f PWM
(27)
2
If there is no gate resistor then this is the total dissipation that will
occur inside the A3944. If a gate resistor is used then the dissipa-
tion will be shared proportionally by the gate resistor and by the
on-resistance of the A3944 gate drive. This gives the equation for
internal dissipation as:
R ON
R ON + R G
where
R ON is the on-resistance of the gate drive and
R G is the gate resistor value.
events per second is the PWM frequency, so the dissipation due
to switching losses becomes:
P D =
where f PWM is the PWM frequency for the channel.
As an example, a 10 nF capacitor and a PWM frequency of
10 kHz will produce a dissipation in the A3944 for a single chan-
nel of approximately 4.3 mW. This is the worst case dissipation.
It will not be present if a load is attached and will be reduced by
any DRNx current limit resistor.
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
28
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| A3946KLB-T | 功能描述:IC MOSFET CONTROLLER 16-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - 电机和风扇控制器，驱动器 系列:- 标准包装:1 系列:- 应用:直流电机驱动器，步进电机驱动器 评估套件:- 输出数:1 或 2 电流 - 输出:750mA 电压 - 负载:10 V ~ 40 V 电源电压:4.5 V ~ 5.5 V 工作温度:-20°C ~ 70°C 安装类型:表面贴装 封装/外壳:24-BFSOP（0.295"，7.50mm 宽） 供应商设备封装:24-SOP 包装:Digi-Reel® 其它名称:MTS62C19A-HS105DKR |
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