参数资料
型号: A4979GLPTR-T
厂商: Allegro Microsystems Inc
文件页数: 31/44页
文件大小: 0K
描述: IC MOTOR DRVR MICRO STEP 28TSSOP
特色产品: A4979 Series
标准包装: 1
应用: 直流电机驱动器,PWM 电机驱动器,步进电机驱动器
评估套件: 可供
输出数: 1
电流 - 输出: 1.5A
电压 - 负载: 7 V ~ 50 V
电源电压: 3 V ~ 5.5 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
供应商设备封装: 28-TSSOP 裸露焊盘
包装: 标准包装
其它名称: 620-1463-6
A4979
Microstepping Programmable Stepper Motor Driver
With Stall Detect and Short Circuit Protection
Power Dissipation
The A4979 is a power circuit, therefore careful consideration
must be given to power dissipation and the effects of high cur-
rents on interconnect and supply wiring.
A first order approximation of the power dissipation in the A4979
can be determined by examining the power dissipation in each of
the two bridges during each of the operation modes. When syn-
Synchronous Fast Decay
? Diagonally opposite DMOS output
transistors are on
? Current flows from ground through
load to positive supply
Dissipation is I 2 R losses in the
DMOS transistors:
P D(SF) = I 2 × (R DS(on)H +R DS(on)L )
Synchronous Slow Decay
? Both low-side DMOS output
transistors are on
? Current circulates through both
transistors and the load
Dissipation is I 2 R losses in the DMOS
transistors:
P D(SS) = I 2 × (2 × R DS(on)L )
chronous rectification is used current will flow most of the time
through the DMOS transistors that are switched on. When syn-
chronous rectification is not used the current will flow through
the body diode of the DMOS transistors during the decay phase.
The use of fast or slow decay will also affect the dissipation. All
the above combinations can be calculated from five basic DMOS
output states as shown in figure 14.
Non-Synchronous Fast Decay
? Diagonally opposite body diodes
conducting
? Current flows from ground through
load to positive supply
Dissipation is IV losses in the diodes:
P D(NF) = I × ( V FH + V FL )
Non-Synchronous Slow Decay
? One low-side DMOS output transistor
and one body diode conducting
? Current circulates through the diode,
the transistor and the load
Dissipation is I 2 R losses in the DMOS
transistors plus IV loss in the diode:
P D(NS) = (I 2 × R DS(on)L ) ? ( I × V F )
Drive Current Ramp-up
(Used in all combinations)
? Diagonally opposite DMOS output
transistors are on
? Current flows from positive supply
through load to ground
Dissipation is I 2 R losses in the
DMOS transistors:
P D = I 2 × (R DS(on)H + R DS(on)L )
Figure 14. Basic output states
Allegro MicroSystems, LLC
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
31
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