- 您现在的位置：买卖IC网 > PDF目录17412 > ADP1850DP-EVALZ (Analog Devices Inc)EVAL BOARD FOR ADP1850DP PDF资料下载
参数资料
| 型号： | ADP1850DP-EVALZ |
| 厂商： | Analog Devices Inc |
| 文件页数： | 8/32页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR ADP1850DP |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 1.09V |
| 电流 - 输出： | 50A |
| 输入电压： | 10 ~ 15 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 300kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | ADP1850DP |
第1页第2页第3页第4页第5页第6页第7页当前第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页
ADP1850
Data Sheet
Pin No.
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
(EPAD)
Mnemonic
ILIM2
BST2
SW2
DH2
PGND2
DL2
DL1
PGND1
DH1
SW1
BST1
ILIM1
PGOOD1
SS1
RAMP1
COMP1
FB1
TRK1
Exposed Pad
(EPAD)
Description
Current Limit Sense Comparator Inverting Input for Channel 2. Connect a resistor between ILIM2 and SW2 to set
the current limit offset. For accurate current limit sensing, connect ILIM2 to a current sense resistor at the source
of the low-side MOSFET.
Boot-Strapped Upper Rail of High Side Internal Driver for Channel 2. Connect a multilayer ceramic capacitor
(0.1 μF to 0.22 μF) between BST2 and SW2. There is an internal boost rectifier connected between VDL and BST2.
Switch Node for Channel 2. Connect to source of the high-side N-channel MOSFET and the drain of the low-side
N-channel MOSFET of Channel 2.
High-Side Switch Gate Driver Output for Channel 2. Capable of driving MOSFETs with total input capacitance up
to 20 nF.
Power Ground for Channel 2. Ground for internal Channel 2 driver. Differential current is sensed between SW2
and PGND2. Use the Kelvin sensing connection technique between PGND2 and source of the low-side MOSFET.
Low-Side Synchronous Rectifier Gate Driver Output for Channel 2. To set the gain of the current sense amplifier,
connect a resistor between DL2 and PGND2. Capable of driving MOSFETs with a total input capacitance up to 20 nF.
Low-Side Synchronous Rectifier Gate Driver Output for Channel 1. To set the gain of the current sense amplifier,
connect a resistor between DL1 and PGND1. Capable of driving MOSFETs with a total input capacitance up to 20 nF.
Power Ground for Channel 1. Ground for internal Channel 1 driver. Differential current is sensed between SW1
and PGND1. Use the Kelvin sensing connection technique between PGND1 and source of the low-side MOSFET.
High-Side Switch Gate Driver Output for Channel 1. Capable of driving MOSFETs with a total input capacitance
up to 20 nF.
Power Switch Node for Channel 1. Connect to source of the high-side N-channel MOSFET and the drain of the
low-side N-channel MOSFET of Channel 1.
Boot-Strapped Upper Rail of High Side Internal Driver for Channel 1. Connect a multilayer ceramic capacitor
(0.1 μF to 0.22 μF) between BST1 and SW1. There is an internal boost diode or rectifier connected between VDL
and BST1.
Current Limit Sense Comparator Inverting Input for Channel 1. Connect a resistor between ILIM1 and SW1 to set
the current limit offset. For accurate current limit sensing, connect ILIM1 to a current sense resistor at the source
of the low-side MOSFET.
Power Good. Open-drain power-good indicator logic output with an internal 12 kΩ resistor connected between
PGOOD1 and VCCO. PGOOD1 is pulled to ground when the Channel 1 output is outside the regulation window.
An external pull-up resistor is not required.
Soft Start Input for Channel 1. Connect a capacitor from SS1 to AGND to set the soft start period. This node is
internally pulled up to 5 V with a 6.5 μA current source.
Connect a resistor from RAMP1 to VIN to set up a ramp current for slope compensation in Channel 1. The voltage
at RAMP2 is 0.2 V. This pin is high impedance when the channel is disabled.
Compensation Node for Channel 1. Output of Channel 1 error amplifier. Connect a series resistor-capacitor
network from COMP1 to AGND to compensate the regulation control loop.
Output Voltage Feedback for Channel 1. Connect to Output 1 via a resistor divider.
Tracking Input for Channel 1. Connect TRK1 to VCCO if tracking is not used.
Connect the bottom exposed pad of the LFCSP package to the system AGND plane.
Rev. A | Page 8 of 32
相关PDF资料 |
PDF描述 |
|---|---|
| SS2P2LHE3/84A | DIODE SCHOTTKY 2A 20V SMP |
| SS3P6LHM3/87A | DIODE SCHOTTKY 3A 60V SMP |
| ADP2114-EVALZ | BOARD EVALUATION 3.3V/1.8V |
| RCM12DCBI-S189 | CONN EDGECARD 24POS R/A .156 SLD |
| GCC28DCAD | CONN EDGECARD 56POS R/A .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ADP1850SP-EVALZ | 功能描述:EVAL BOARD FOR ADP1850SP RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| ADP1851ACPZ-R7 | 功能描述:电流型 PWM 控制器 w-range input Synch StepDown DC/DC Cntr RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| ADP1851-EVALZ | 功能描述:电源管理IC开发工具 Evaluation Board 1.8V 25A Output RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| ADP1853 | 制造商:AD 制造商全称:Analog Devices 功能描述:Synchronous, Step-Down DC-to-DC Controller |
| ADP1853ACPZ-R7 | 功能描述:DC/DC 开关控制器 Synch StepDown DC/DC Cntr w/Volt trking RoHS:否 制造商:Texas Instruments 输入电压:6 V to 100 V 开关频率: 输出电压:1.215 V to 80 V 输出电流:3.5 A 输出端数量:1 最大工作温度:+ 125 C 安装风格: 封装 / 箱体:CPAK |
发布紧急采购，3分钟左右您将得到回复。